Evaluation of a Simplified Modeling Approach for SEE Cross-Section Prediction: A Case Study of SEU on 6T SRAM Cells
Electrical models play a crucial role in assessing the radiation sensitivity of devices. However, since they are usually not provided for end users, it is essential to have alternative modeling approaches to optimize circuit design before irradiation tests, and to support the understanding of post-i...
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| Veröffentlicht in: | Electronics (Basel) 2024-05, Vol.13 (10), p.1954 |
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| container_issue | 10 |
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| container_title | Electronics (Basel) |
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| creator | Marques, Cleiton M. Wrobel, Frédéric Aguiar, Ygor Q. Michez, Alain Saigné, Frédéric Boch, Jérôme Dilillo, Luigi García Alía, Rubén |
| description | Electrical models play a crucial role in assessing the radiation sensitivity of devices. However, since they are usually not provided for end users, it is essential to have alternative modeling approaches to optimize circuit design before irradiation tests, and to support the understanding of post-irradiation data. This work proposes a novel simplified methodology to evaluate the single-event effects (SEEs) cross-section. To validate the proposed approach, we consider the 6T SRAM cell a case study in four technological nodes. The modeling considers layout features and the doping profile, presenting ways to estimate unknown parameters. The accuracy and limitations are determined by comparing our simulations with actual experimental data. The results demonstrated a strong correlation with irradiation data, without requiring any fitting of the simulation results or access to process design kit (PDK) data. This proves that our approach is a reliable method for calculating the single-event upset (SEU) cross-section for heavy-ion irradiation. |
| doi_str_mv | 10.3390/electronics13101954 |
| format | Article |
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However, since they are usually not provided for end users, it is essential to have alternative modeling approaches to optimize circuit design before irradiation tests, and to support the understanding of post-irradiation data. This work proposes a novel simplified methodology to evaluate the single-event effects (SEEs) cross-section. To validate the proposed approach, we consider the 6T SRAM cell a case study in four technological nodes. The modeling considers layout features and the doping profile, presenting ways to estimate unknown parameters. The accuracy and limitations are determined by comparing our simulations with actual experimental data. The results demonstrated a strong correlation with irradiation data, without requiring any fitting of the simulation results or access to process design kit (PDK) data. This proves that our approach is a reliable method for calculating the single-event upset (SEU) cross-section for heavy-ion irradiation.</description><identifier>ISSN: 2079-9292</identifier><identifier>EISSN: 2079-9292</identifier><identifier>DOI: 10.3390/electronics13101954</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Analysis ; Case studies ; Circuit design ; Circuits ; Cross-sections ; Design optimization ; Electric fields ; Electronics ; End users ; Engineering Sciences ; Heavy ions ; Ion irradiation ; Memory (Computers) ; Methods ; Modelling ; Physics ; Radiation ; Random access memory ; Simulation ; Simulation methods ; Single Event Effects ; Single event upsets ; Static random access memory ; Transistors</subject><ispartof>Electronics (Basel), 2024-05, Vol.13 (10), p.1954</ispartof><rights>COPYRIGHT 2024 MDPI AG</rights><rights>2024 by the authors. Licensee MDPI, Basel, Switzerland. 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| source | MDPI - Multidisciplinary Digital Publishing Institute; EZB-FREE-00999 freely available EZB journals |
| subjects | Analysis Case studies Circuit design Circuits Cross-sections Design optimization Electric fields Electronics End users Engineering Sciences Heavy ions Ion irradiation Memory (Computers) Methods Modelling Physics Radiation Random access memory Simulation Simulation methods Single Event Effects Single event upsets Static random access memory Transistors |
| title | Evaluation of a Simplified Modeling Approach for SEE Cross-Section Prediction: A Case Study of SEU on 6T SRAM Cells |
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