In situ study of growth kinetics of {100} and {110} crystal/melt interfaces during unidirectional solidification of silicon

In situ study of growth kinetics of {100} and {110} crystal/melt interfaces during unidirectional solidification of silicon

The {100} and {110} solid/liquid interfaces of silicon are considered atomically rough, following the atom-by-atom growth mode during crystallization processes. However, observed differences in growth kinetics are not yet well understood. In this study, the growth behavior of {100} and {110} crystal...

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Veröffentlicht in:Journal of crystal growth 2024-02, Vol.627, p.127524, Article 127524
Hauptverfasser: Mishra, Shashank Shekhar, Chuang, Lu-Chung, Maeda, Kensaku, Nozawa, Jun, Morito, Haruhiko, Duffar, Thierry, Fujiwara, Kozo
Format: Artikel
Sprache:eng
Schlagworte:
A1. Directional solidification
A1. Growth models
A1. Interfaces
A1. Optical microscopy
A2. Growth from melt
B2. Semiconducting silicon
Physics
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container_issue
container_start_page 127524
container_title Journal of crystal growth
container_volume 627
creator Mishra, Shashank Shekhar
Chuang, Lu-Chung
Maeda, Kensaku
Nozawa, Jun
Morito, Haruhiko
Duffar, Thierry
Fujiwara, Kozo
description The {100} and {110} solid/liquid interfaces of silicon are considered atomically rough, following the atom-by-atom growth mode during crystallization processes. However, observed differences in growth kinetics are not yet well understood. In this study, the growth behavior of {100} and {110} crystal/melt interfaces in silicon is studied. The growth velocity at different cooling rates is investigated for both growth orientations. Experimental results show that these growth velocities are similar, irrespective of the cooling rate. An analysis of the ratio of the kinetic coefficients of both orientations shows that they are comparable.
doi_str_mv 10.1016/j.jcrysgro.2023.127524
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source ScienceDirect Journals (5 years ago - present)
subjects A1. Directional solidification
A1. Growth models
A1. Interfaces
A1. Optical microscopy
A2. Growth from melt
B2. Semiconducting silicon
Physics
title In situ study of growth kinetics of {100} and {110} crystal/melt interfaces during unidirectional solidification of silicon
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