Evidence of Cationic Antiphase Disorder in Epitaxial Cu(In,Ga)S 2 Grown on GaP/Si(001)
A transmission electron microscopy study of epitaxial Cu(In,Ga)S 2 (CIGS) films coevaporated on GaP/Si(001), in either Cu‐rich or Cu‐poor conditions, is presented. The spatial distribution and the orientation of the different phases by means of electron diffraction are unveiled. From atomically reso...
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| Veröffentlicht in: | Physica status solidi. PSS-RRL. Rapid research letters 2024-04, Vol.18 (6) |
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| creator | Bertin, Eugène Gautron, Éric Barreau, Nicolas Cornet, Charles Arzel, Ludovic Choubrac, Léo Létoublon, Antoine Harel, Sylvie Bernard, Rozenn Jullien, Maud Durand, Olivier |
| description | A transmission electron microscopy study of epitaxial Cu(In,Ga)S
2
(CIGS) films coevaporated on GaP/Si(001), in either Cu‐rich or Cu‐poor conditions, is presented. The spatial distribution and the orientation of the different phases by means of electron diffraction are unveiled. From atomically resolved imaging of the CIGS film's atomic structure, it is concluded that different chalcopyrite domains, sharing cation antiphase symmetries of the cation sublattice, coexist in the films. At least three types of cation antiphase boundaries (CAPBs), which do or do not lead to a violation of the octet rule, depending on the propagation direction, are conceptualized. Even though it is observed that epitaxial CIGS is highly prone to cation antiphase disorder (CAPD), and it is found that the growth of CIGS in Cu‐rich conditions leads to a lower density of CAPBs, as compared to Cu‐poor growth conditions. This opens the question of the influence of CAPBs on CIGS electronic properties. |
| doi_str_mv | 10.1002/pssr.202300485 |
| format | Article |
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2
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2
(CIGS) films coevaporated on GaP/Si(001), in either Cu‐rich or Cu‐poor conditions, is presented. The spatial distribution and the orientation of the different phases by means of electron diffraction are unveiled. From atomically resolved imaging of the CIGS film's atomic structure, it is concluded that different chalcopyrite domains, sharing cation antiphase symmetries of the cation sublattice, coexist in the films. At least three types of cation antiphase boundaries (CAPBs), which do or do not lead to a violation of the octet rule, depending on the propagation direction, are conceptualized. Even though it is observed that epitaxial CIGS is highly prone to cation antiphase disorder (CAPD), and it is found that the growth of CIGS in Cu‐rich conditions leads to a lower density of CAPBs, as compared to Cu‐poor growth conditions. This opens the question of the influence of CAPBs on CIGS electronic properties.</description><subject>Chemical Sciences</subject><subject>Cristallography</subject><subject>Engineering Sciences</subject><subject>Materials</subject><issn>1862-6254</issn><issn>1862-6270</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEYhIMoWKtXzzm24LZvPnd7LGvdFgoKLV5Dms3SSE2WpFb993ap7GmGYWYOD0KPBCYEgE7blOKEAmUAvBBXaEAKSTNJc7juveC36C6lDwAxyzkboPfFydXWG4tDg0t9dME7g-f-6Nq9ThY_uxRibSN2Hi9ad9Q_Th9w-TVa-adKjzeY4iqGb4-Dx5V-m27cCICM79FNow_JPvzrEG1fFttyma1fq1U5X2cmZyQrrJS0trWwghG7k6KRULBZcTY2tzXVO2JgV0hteEMaYJwyzSg3nAqrjSVsiMaX270-qDa6Tx1_VdBOLedr1WXABYiCwKnrTi5dE8OZlG36AQHVAVQdQNUDZH_kFGDz</recordid><startdate>20240409</startdate><enddate>20240409</enddate><creator>Bertin, Eugène</creator><creator>Gautron, Éric</creator><creator>Barreau, Nicolas</creator><creator>Cornet, Charles</creator><creator>Arzel, Ludovic</creator><creator>Choubrac, Léo</creator><creator>Létoublon, Antoine</creator><creator>Harel, Sylvie</creator><creator>Bernard, Rozenn</creator><creator>Jullien, Maud</creator><creator>Durand, Olivier</creator><general>Wiley-VCH Verlag</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0009-0008-2641-9658</orcidid><orcidid>https://orcid.org/0000-0002-1363-7401</orcidid><orcidid>https://orcid.org/0000-0002-4956-7767</orcidid><orcidid>https://orcid.org/0000-0002-3655-5943</orcidid><orcidid>https://orcid.org/0000-0001-9312-5037</orcidid><orcidid>https://orcid.org/0000-0003-3236-6376</orcidid><orcidid>https://orcid.org/0000-0002-1427-9378</orcidid><orcidid>https://orcid.org/0000-0002-8423-153X</orcidid><orcidid>https://orcid.org/0000-0002-1669-7143</orcidid><orcidid>https://orcid.org/0000-0003-2645-269X</orcidid></search><sort><creationdate>20240409</creationdate><title>Evidence of Cationic Antiphase Disorder in Epitaxial Cu(In,Ga)S 2 Grown on GaP/Si(001)</title><author>Bertin, Eugène ; Gautron, Éric ; Barreau, Nicolas ; Cornet, Charles ; Arzel, Ludovic ; Choubrac, Léo ; Létoublon, Antoine ; Harel, Sylvie ; Bernard, Rozenn ; Jullien, Maud ; Durand, Olivier</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c731-8e662ded5e531eb65f60839865fe7ed2ab1c0b86ac4f1f03423a324c425eace13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Chemical Sciences</topic><topic>Cristallography</topic><topic>Engineering Sciences</topic><topic>Materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bertin, Eugène</creatorcontrib><creatorcontrib>Gautron, Éric</creatorcontrib><creatorcontrib>Barreau, Nicolas</creatorcontrib><creatorcontrib>Cornet, Charles</creatorcontrib><creatorcontrib>Arzel, Ludovic</creatorcontrib><creatorcontrib>Choubrac, Léo</creatorcontrib><creatorcontrib>Létoublon, Antoine</creatorcontrib><creatorcontrib>Harel, Sylvie</creatorcontrib><creatorcontrib>Bernard, Rozenn</creatorcontrib><creatorcontrib>Jullien, Maud</creatorcontrib><creatorcontrib>Durand, Olivier</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Physica status solidi. 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| title | Evidence of Cationic Antiphase Disorder in Epitaxial Cu(In,Ga)S 2 Grown on GaP/Si(001) |
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