Scaling up of Growth, Fabrication, and Device Transfer Process for GaN‐based LEDs on H‐BN Templates to 6‐inch Sapphire Substrates

The growth of hexagonal boron nitride (h‐BN) and van der Waals (vdW) epitaxy of blue multi‐quantum well (MQW) GaN‐based LED heterostructures on 6‐inch sapphire substrates using metal‐organic chemical vapour deposition (MOCVD) is demonstrated. Challenges associated with the growth of large surface h‐...

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Veröffentlicht in:	Advanced materials technologies 2023-09, Vol.8 (18)
Hauptverfasser:	Vuong, Phuong, Moudakir, Tarik, Gujrati, Rajat, Srivastava, Ashutosh, Ottapilakkal, Vishnu, Gautier, Simon, Voss, Paul L., Sundaram, Suresh, Salvestrini, Jean Paul, Ougazzaden, Abdallah
Format:	Artikel
Sprache:	eng
Schlagworte:	Engineering Sciences
Online-Zugang:	Volltext
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