Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination

The aim of this article is to show that it is possible to rapidly estimate the activation energies of electron traps in AlInN/GaN transistors operating at room temperature by combining pulsed electrical measurements with photoionization techniques using infrared illumination. This technique avoids the time‐consuming task of performing electrical measurements at different temperatures to determine the activation energies of the electron traps using Arrhenius laws. Thus, a deep level at 1.3 eV is detected and attributed to the presence of carbon in GaN buffer of the component. Moreover, we have highlighted that the trapping effect can be screened when the transistors are biased with a high drain‐source voltage during pulsed measurements. It is possible to rapidly estimate the activation energies of electron traps in AlInN/GaN transistors operating at room temperature by combining pulsed electrical measurements with photoionization techniques using red and infrared illumination. Deep levels at 1.3 and 20 eV are detected and attributed to the presence of carbon and dislocations in GaN buffer of the component.