Ion beam synthesis of embedded III-As nanocrystals in silicon substrate

Our goal is to use the versatility of ion beam synthesis to grow nanocrystals of InxGa1‐xAs alloys embedded in a silicon substrate. We study, first, the annealing conditions necessary to grow well defined InAs and GaAs binary nanocrystals. High dose of As, Ga and In is implanted, respectively, at 13...

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Veröffentlicht in:	Physica status solidi. C 2015-01, Vol.12 (1-2), p.55-59
Hauptverfasser:	Khelifi, Rim, Frégnaux, Mathieu, Le Gall, Yann, Muller, Dominique, Schmerber, Guy, Mathiot, Daniel
Format:	Artikel
Sprache:	eng
Schlagworte:	Alloys Annealing Condensed Matter Gallium arsenide Gallium arsenides grazing incidence X-ray diffraction Indium arsenides InxGa1-xAs nanocrystals ion beam synthesis Ion beams Nanocrystals Physics Raman Silicon substrates
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