Extracting edge conduction around threshold in mesa-isolated SOI MOSFETs

•Aknee has been observed in the mesa isolated SOI pMOSFETs transfer characteristic.•The mesa isolation induces a presence of a parasitic transistor at the SOI pMOSFETs edges, which conducts earlier than the main transistor.•A methodology was presented to decompose edge and center contributions in me...

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Veröffentlicht in:	Solid-state electronics 2023-11, Vol.209, p.108736, Article 108736
Hauptverfasser:	Boutayeb, A., Theodorou, C., Golanski, D., Batude, P., Brunet, L., Bosch, D., Guyader, F., Joblot, S., Ponthenier, F., Lacord, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Decomposing methodology Edge contribution Engineering Sciences Mesa isolation Micro and nanotechnologies Microelectronics Parasitic transistor Planar transistor SOI transistor TCAD
Online-Zugang:	Volltext
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