Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches

The GaN HEMT power device emerges as a promising wide-bandgap component for obtaining ultra-compact and very high efficiency power converters. Nevertheless, its long-time switching operation capability in high overload regimes near or just above its maximum ratings remains unknown. The physical degr...

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Veröffentlicht in:	Microelectronics and reliability 2023-11, Vol.150, p.115172, Article 115172
Hauptverfasser:	Ghizzo, L., Trémouilles, D., Richardeau, F., Vinnac, S., Jamin, F., Guibaud, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electric power Engineering Sciences Micro and nanotechnologies Microelectronics
Online-Zugang:	Volltext
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