Ferroelectricity of pristine Hf 0.5 Zr 0.5 O 2 films fabricated by atomic layer deposition

Hafnium-based ferroelectric films, remaining their ferroelectricity down to nanoscale thickness, present a promising application for low-power logic devices and nonvolatile memories. It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium...

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Veröffentlicht in:	Chinese physics B 2023-10, Vol.32 (10), p.108102
Hauptverfasser:	Chen 陈, Luqiu 璐秋, Zhang 张, Xiaoxu 晓旭, Feng 冯, Guangdi 光迪, Liu 刘, Yifei 逸飞, Hao 郝, Shenglan 胜兰, Zhu 朱, Qiuxiang 秋香, Feng 冯, Xiaoyu 晓钰, Qu 屈, Ke 可, Yang 杨, Zhenzhong 振中, Qi 祁, Yuanshen 原深, Ivry, Yachin, Dkhil, Brahim, Tian 田, Bobo 博博, Chu 褚, Junhao 君浩, Duan 段, Chungang 纯刚
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics
Online-Zugang:	Volltext
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