Ferroelectricity of pristine Hf 0.5 Zr 0.5 O 2 films fabricated by atomic layer deposition
Hafnium-based ferroelectric films, remaining their ferroelectricity down to nanoscale thickness, present a promising application for low-power logic devices and nonvolatile memories. It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium...
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| Veröffentlicht in: | Chinese physics B 2023-10, Vol.32 (10), p.108102 |
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| creator | Chen 陈, Luqiu 璐秋 Zhang 张, Xiaoxu 晓旭 Feng 冯, Guangdi 光迪 Liu 刘, Yifei 逸飞 Hao 郝, Shenglan 胜兰 Zhu 朱, Qiuxiang 秋香 Feng 冯, Xiaoyu 晓钰 Qu 屈, Ke 可 Yang 杨, Zhenzhong 振中 Qi 祁, Yuanshen 原深 Ivry, Yachin Dkhil, Brahim Tian 田, Bobo 博博 Chu 褚, Junhao 君浩 Duan 段, Chungang 纯刚 |
| description | Hafnium-based ferroelectric films, remaining their ferroelectricity down to nanoscale thickness, present a promising application for low-power logic devices and nonvolatile memories. It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics. This work demonstrates that a remanent polarization (
P
r
) value of < 5 μC/cm
2
can be obtained in as-deposited Hf
0.5
Zr
0.5
O
2
(HZO) films that are fabricated by thermal atomic layer deposition (TALD) under low temperature of 250 °C. The ferroelectric orthorhombic phase (o-phase) in the as-deposited HZO films is detected by scanning transmission electron microscopy (STEM). This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments. |
| doi_str_mv | 10.1088/1674-1056/accff3 |
| format | Article |
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P
r
) value of < 5 μC/cm
2
can be obtained in as-deposited Hf
0.5
Zr
0.5
O
2
(HZO) films that are fabricated by thermal atomic layer deposition (TALD) under low temperature of 250 °C. The ferroelectric orthorhombic phase (o-phase) in the as-deposited HZO films is detected by scanning transmission electron microscopy (STEM). This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.</description><identifier>ISSN: 1674-1056</identifier><identifier>EISSN: 2058-3834</identifier><identifier>DOI: 10.1088/1674-1056/accff3</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>Physics</subject><ispartof>Chinese physics B, 2023-10, Vol.32 (10), p.108102</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1221-a66cf13d809d5db74bf1001d2f5f2e96eda38bdc0bcd39bbd6ff551256c4a36f3</citedby><cites>FETCH-LOGICAL-c1221-a66cf13d809d5db74bf1001d2f5f2e96eda38bdc0bcd39bbd6ff551256c4a36f3</cites><orcidid>0000-0002-9862-625X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://centralesupelec.hal.science/hal-04166867$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Chen 陈, Luqiu 璐秋</creatorcontrib><creatorcontrib>Zhang 张, Xiaoxu 晓旭</creatorcontrib><creatorcontrib>Feng 冯, Guangdi 光迪</creatorcontrib><creatorcontrib>Liu 刘, Yifei 逸飞</creatorcontrib><creatorcontrib>Hao 郝, Shenglan 胜兰</creatorcontrib><creatorcontrib>Zhu 朱, Qiuxiang 秋香</creatorcontrib><creatorcontrib>Feng 冯, Xiaoyu 晓钰</creatorcontrib><creatorcontrib>Qu 屈, Ke 可</creatorcontrib><creatorcontrib>Yang 杨, Zhenzhong 振中</creatorcontrib><creatorcontrib>Qi 祁, Yuanshen 原深</creatorcontrib><creatorcontrib>Ivry, Yachin</creatorcontrib><creatorcontrib>Dkhil, Brahim</creatorcontrib><creatorcontrib>Tian 田, Bobo 博博</creatorcontrib><creatorcontrib>Chu 褚, Junhao 君浩</creatorcontrib><creatorcontrib>Duan 段, Chungang 纯刚</creatorcontrib><title>Ferroelectricity of pristine Hf 0.5 Zr 0.5 O 2 films fabricated by atomic layer deposition</title><title>Chinese physics B</title><description>Hafnium-based ferroelectric films, remaining their ferroelectricity down to nanoscale thickness, present a promising application for low-power logic devices and nonvolatile memories. It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics. This work demonstrates that a remanent polarization (
P
r
) value of < 5 μC/cm
2
can be obtained in as-deposited Hf
0.5
Zr
0.5
O
2
(HZO) films that are fabricated by thermal atomic layer deposition (TALD) under low temperature of 250 °C. The ferroelectric orthorhombic phase (o-phase) in the as-deposited HZO films is detected by scanning transmission electron microscopy (STEM). This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.</description><subject>Physics</subject><issn>1674-1056</issn><issn>2058-3834</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEQhoMoWKt3j7l62HaSbNLtsRRrhYVe9NJLyNdgZNuUZBH239u10tMLM887DA8hzwxmDJpmztSirhhINTfOIYobMuEgm0o0or4lk-v6njyU8g2gGHAxIftNyDmFLrg-Rxf7gSakpxxLH4-BbpHCTNJ9_osd5RRjdygUjT3Tpg-e2oGaPh2io50ZQqY-nFKJfUzHR3KHpivh6T-n5HPz-rHeVu3u7X29aivHOGeVUcohE76BpZfeLmqLDIB5jhJ5WKrgjWisd2CdF0trvUKUknGpXG2EQjElL5e7X6bT59cPJg86mai3q1aPM6iZUo1a_LAzCxfW5VRKDngtMNCjRz2K0qMoffEofgG4LGXv</recordid><startdate>20231001</startdate><enddate>20231001</enddate><creator>Chen 陈, Luqiu 璐秋</creator><creator>Zhang 张, Xiaoxu 晓旭</creator><creator>Feng 冯, Guangdi 光迪</creator><creator>Liu 刘, Yifei 逸飞</creator><creator>Hao 郝, Shenglan 胜兰</creator><creator>Zhu 朱, Qiuxiang 秋香</creator><creator>Feng 冯, Xiaoyu 晓钰</creator><creator>Qu 屈, Ke 可</creator><creator>Yang 杨, Zhenzhong 振中</creator><creator>Qi 祁, Yuanshen 原深</creator><creator>Ivry, Yachin</creator><creator>Dkhil, Brahim</creator><creator>Tian 田, Bobo 博博</creator><creator>Chu 褚, Junhao 君浩</creator><creator>Duan 段, Chungang 纯刚</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-9862-625X</orcidid></search><sort><creationdate>20231001</creationdate><title>Ferroelectricity of pristine Hf 0.5 Zr 0.5 O 2 films fabricated by atomic layer deposition</title><author>Chen 陈, Luqiu 璐秋 ; Zhang 张, Xiaoxu 晓旭 ; Feng 冯, Guangdi 光迪 ; Liu 刘, Yifei 逸飞 ; Hao 郝, Shenglan 胜兰 ; Zhu 朱, Qiuxiang 秋香 ; Feng 冯, Xiaoyu 晓钰 ; Qu 屈, Ke 可 ; Yang 杨, Zhenzhong 振中 ; Qi 祁, Yuanshen 原深 ; Ivry, Yachin ; Dkhil, Brahim ; Tian 田, Bobo 博博 ; Chu 褚, Junhao 君浩 ; Duan 段, Chungang 纯刚</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1221-a66cf13d809d5db74bf1001d2f5f2e96eda38bdc0bcd39bbd6ff551256c4a36f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen 陈, Luqiu 璐秋</creatorcontrib><creatorcontrib>Zhang 张, Xiaoxu 晓旭</creatorcontrib><creatorcontrib>Feng 冯, Guangdi 光迪</creatorcontrib><creatorcontrib>Liu 刘, Yifei 逸飞</creatorcontrib><creatorcontrib>Hao 郝, Shenglan 胜兰</creatorcontrib><creatorcontrib>Zhu 朱, Qiuxiang 秋香</creatorcontrib><creatorcontrib>Feng 冯, Xiaoyu 晓钰</creatorcontrib><creatorcontrib>Qu 屈, Ke 可</creatorcontrib><creatorcontrib>Yang 杨, Zhenzhong 振中</creatorcontrib><creatorcontrib>Qi 祁, Yuanshen 原深</creatorcontrib><creatorcontrib>Ivry, Yachin</creatorcontrib><creatorcontrib>Dkhil, Brahim</creatorcontrib><creatorcontrib>Tian 田, Bobo 博博</creatorcontrib><creatorcontrib>Chu 褚, Junhao 君浩</creatorcontrib><creatorcontrib>Duan 段, Chungang 纯刚</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Chinese physics B</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen 陈, Luqiu 璐秋</au><au>Zhang 张, Xiaoxu 晓旭</au><au>Feng 冯, Guangdi 光迪</au><au>Liu 刘, Yifei 逸飞</au><au>Hao 郝, Shenglan 胜兰</au><au>Zhu 朱, Qiuxiang 秋香</au><au>Feng 冯, Xiaoyu 晓钰</au><au>Qu 屈, Ke 可</au><au>Yang 杨, Zhenzhong 振中</au><au>Qi 祁, Yuanshen 原深</au><au>Ivry, Yachin</au><au>Dkhil, Brahim</au><au>Tian 田, Bobo 博博</au><au>Chu 褚, Junhao 君浩</au><au>Duan 段, Chungang 纯刚</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ferroelectricity of pristine Hf 0.5 Zr 0.5 O 2 films fabricated by atomic layer deposition</atitle><jtitle>Chinese physics B</jtitle><date>2023-10-01</date><risdate>2023</risdate><volume>32</volume><issue>10</issue><spage>108102</spage><pages>108102-</pages><issn>1674-1056</issn><eissn>2058-3834</eissn><abstract>Hafnium-based ferroelectric films, remaining their ferroelectricity down to nanoscale thickness, present a promising application for low-power logic devices and nonvolatile memories. It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics. This work demonstrates that a remanent polarization (
P
r
) value of < 5 μC/cm
2
can be obtained in as-deposited Hf
0.5
Zr
0.5
O
2
(HZO) films that are fabricated by thermal atomic layer deposition (TALD) under low temperature of 250 °C. The ferroelectric orthorhombic phase (o-phase) in the as-deposited HZO films is detected by scanning transmission electron microscopy (STEM). This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.</abstract><pub>IOP Publishing</pub><doi>10.1088/1674-1056/accff3</doi><orcidid>https://orcid.org/0000-0002-9862-625X</orcidid></addata></record> |
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| title | Ferroelectricity of pristine Hf 0.5 Zr 0.5 O 2 films fabricated by atomic layer deposition |
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