Formation of light-emitting defects in silicon by swift heavy ion irradiation and subsequent annealing

•FZ- and CZ-Si wafers irradiated with Xe 167 MeV swift heavy ions were investigated.•Strong defect-related IR photoluminescence was originated from the as-irradiated wafers at low temperatures.•PL intensity strongly increase after low-temperature annealing at 400 °C. High-resistivity floating-zone s...

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Veröffentlicht in:	Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2023-02, Vol.535, p.132-136
Hauptverfasser:	Cherkova, S.G., Volodin, V.A., Skuratov, V.A., Stoffel, M., Rinnert, H., Vergnat, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Defects in silicon Photoluminescence Physics Silicon Swift heavy ions
Online-Zugang:	Volltext
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