Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition
•Lateral growth of nucleated WS2 domains on C-plane sapphire by MOCVD in a commercial showerhead reactor was demonstrated.•The crystalline quality of coalesced WS2 monolayers with 108 and electron mobility of 5 cm2/Vs.•Impact of the change of offcut direction of sapphire, substrate annealing temper...
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| Veröffentlicht in: | Journal of crystal growth 2023-04, Vol.608, p.127111, Article 127111 |
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| creator | Tang, Haonan Pasko, Sergej Krotkus, Simonas Anders, Thorsten Wockel, Cornelia Mischke, Jan Wang, Xiaochen Conran, Ben McAleese, Clifford Teo, Ken Banerjee, Sreetama Silva, Henry Medina Morin, Pierre Asselberghs, Inge Ghiami, Amir Grundmann, Annika Tang, Songyao Fiadziushkin, Hleb Kalisch, Holger Vescan, Andrei El Kazzi, Salim Marty, Alain Dosenovic, Djordje Okuno, Hanako Le Van-Jodin, Lucie Heuken, Michael |
| description | •Lateral growth of nucleated WS2 domains on C-plane sapphire by MOCVD in a commercial showerhead reactor was demonstrated.•The crystalline quality of coalesced WS2 monolayers with 108 and electron mobility of 5 cm2/Vs.•Impact of the change of offcut direction of sapphire, substrate annealing temperature and WS2 growth temperature was investigated.
The nucleation of tungsten disulfide WS2 crystallites and coalescence behaviour of monolayer WS2 films grown on C-plane sapphire have been studied in a commercial AIXTRON close coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor using tungsten hexacarbonyl and di-tert-butyl sulfide as precursors. The influence of sapphire substrates offcut (both orientation and angle), as well as the substrate annealing conditions and growth temperature, on the nucleation and size of the WS2 domains has been investigated. A higher nucleation temperature combined with increased substrate annealing temperatures was found to promote an increase in the WS2 domain size. The dependence of surface coverage and coalescence behaviour of the WS2 domains on the growth duration has also been determined, allowing monolayer WS2 films with |
| doi_str_mv | 10.1016/j.jcrysgro.2023.127111 |
| format | Article |
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The nucleation of tungsten disulfide WS2 crystallites and coalescence behaviour of monolayer WS2 films grown on C-plane sapphire have been studied in a commercial AIXTRON close coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor using tungsten hexacarbonyl and di-tert-butyl sulfide as precursors. The influence of sapphire substrates offcut (both orientation and angle), as well as the substrate annealing conditions and growth temperature, on the nucleation and size of the WS2 domains has been investigated. A higher nucleation temperature combined with increased substrate annealing temperatures was found to promote an increase in the WS2 domain size. The dependence of surface coverage and coalescence behaviour of the WS2 domains on the growth duration has also been determined, allowing monolayer WS2 films with < 10 % bilayer to be obtained. Crystalline quality of the coalesced WS2 films has been assessed by grazing incidence XRD and misorientation mapping using 4D-scanning transmission electron microscopy, showing a slight in-plane misorientation of the crystallites in the WS2 monolayer. The electrical performance of the coalesced WS2 films was assessed using backgated TLM structures demonstrating mobility values of up to 5 cm2/Vs and a high Ion/Ioff ratio greater than 108.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2023.127111</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>A1. Crystal morphology ; A1. Low dimensional structures ; A1. Nucleation ; A3. Metalorganic chemical vapor deposition ; B1. Nanomaterials ; B1. Sulfides ; Physics</subject><ispartof>Journal of crystal growth, 2023-04, Vol.608, p.127111, Article 127111</ispartof><rights>2023 The Authors</rights><rights>Attribution</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c394t-de3c10990eda0f1b1a219c73e7b6ab632794a02d4ba9f810cd214b6990b9ff123</citedby><cites>FETCH-LOGICAL-c394t-de3c10990eda0f1b1a219c73e7b6ab632794a02d4ba9f810cd214b6990b9ff123</cites><orcidid>0000-0001-6718-106X ; 0000-0002-3072-1381 ; 0000-0001-8384-8848 ; 0000-0002-6297-9547 ; 0000-0001-5709-6945 ; 0000-0002-4366-9164 ; 0000-0001-8991-7103 ; 0000-0002-0836-7793 ; 0000-0001-9465-2621 ; 0000-0003-4938-6349 ; 0000-0002-3486-6174 ; 0000-0002-0456-7480</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2023.127111$$EHTML$$P50$$Gelsevier$$Hfree_for_read</linktohtml><link.rule.ids>230,314,776,780,881,3536,27903,27904,45974</link.rule.ids><backlink>$$Uhttps://hal.science/hal-04107337$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Tang, Haonan</creatorcontrib><creatorcontrib>Pasko, Sergej</creatorcontrib><creatorcontrib>Krotkus, Simonas</creatorcontrib><creatorcontrib>Anders, Thorsten</creatorcontrib><creatorcontrib>Wockel, Cornelia</creatorcontrib><creatorcontrib>Mischke, Jan</creatorcontrib><creatorcontrib>Wang, Xiaochen</creatorcontrib><creatorcontrib>Conran, Ben</creatorcontrib><creatorcontrib>McAleese, Clifford</creatorcontrib><creatorcontrib>Teo, Ken</creatorcontrib><creatorcontrib>Banerjee, Sreetama</creatorcontrib><creatorcontrib>Silva, Henry Medina</creatorcontrib><creatorcontrib>Morin, Pierre</creatorcontrib><creatorcontrib>Asselberghs, Inge</creatorcontrib><creatorcontrib>Ghiami, Amir</creatorcontrib><creatorcontrib>Grundmann, Annika</creatorcontrib><creatorcontrib>Tang, Songyao</creatorcontrib><creatorcontrib>Fiadziushkin, Hleb</creatorcontrib><creatorcontrib>Kalisch, Holger</creatorcontrib><creatorcontrib>Vescan, Andrei</creatorcontrib><creatorcontrib>El Kazzi, Salim</creatorcontrib><creatorcontrib>Marty, Alain</creatorcontrib><creatorcontrib>Dosenovic, Djordje</creatorcontrib><creatorcontrib>Okuno, Hanako</creatorcontrib><creatorcontrib>Le Van-Jodin, Lucie</creatorcontrib><creatorcontrib>Heuken, Michael</creatorcontrib><title>Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition</title><title>Journal of crystal growth</title><description>•Lateral growth of nucleated WS2 domains on C-plane sapphire by MOCVD in a commercial showerhead reactor was demonstrated.•The crystalline quality of coalesced WS2 monolayers with <10% bilayer was assessed by GIXRD and 4D-STEM.•Electrical properties of the WS2 layers were determined using backgated TLM structures demostrating Ion/Ioff > 108 and electron mobility of 5 cm2/Vs.•Impact of the change of offcut direction of sapphire, substrate annealing temperature and WS2 growth temperature was investigated.
The nucleation of tungsten disulfide WS2 crystallites and coalescence behaviour of monolayer WS2 films grown on C-plane sapphire have been studied in a commercial AIXTRON close coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor using tungsten hexacarbonyl and di-tert-butyl sulfide as precursors. The influence of sapphire substrates offcut (both orientation and angle), as well as the substrate annealing conditions and growth temperature, on the nucleation and size of the WS2 domains has been investigated. A higher nucleation temperature combined with increased substrate annealing temperatures was found to promote an increase in the WS2 domain size. The dependence of surface coverage and coalescence behaviour of the WS2 domains on the growth duration has also been determined, allowing monolayer WS2 films with < 10 % bilayer to be obtained. Crystalline quality of the coalesced WS2 films has been assessed by grazing incidence XRD and misorientation mapping using 4D-scanning transmission electron microscopy, showing a slight in-plane misorientation of the crystallites in the WS2 monolayer. The electrical performance of the coalesced WS2 films was assessed using backgated TLM structures demonstrating mobility values of up to 5 cm2/Vs and a high Ion/Ioff ratio greater than 108.</description><subject>A1. Crystal morphology</subject><subject>A1. Low dimensional structures</subject><subject>A1. Nucleation</subject><subject>A3. Metalorganic chemical vapor deposition</subject><subject>B1. Nanomaterials</subject><subject>B1. Sulfides</subject><subject>Physics</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNqFkE1PwzAMhiMEEuPjL6BcOXTYSWnXGwjxJU1wgXPkJu6WqWumpBvav6fVgCsXW7L8vJYfIa4QpghY3KymKxv3aRHDVIHSU1QlIh6JCc5Knd0CqGMxGarKQOWzU3GW0gpgIBEmYvG2tS1T70MnqXPSBmo5We4sy9DIftstUs-ddD5t28Y7li3tOSY5nPvqZL2Xa-6pDXFBnbfSLnntLbVyR5sQpeNNSH4MvxAnDbWJL3_6ufh8evx4eMnm78-vD_fzzOoq7zPH2iJUFbAjaLBGUljZUnNZF1QXWpVVTqBcXlPVzBCsU5jXxQDUVdOg0ufi-pC7pNZsol9T3JtA3rzcz804gxyh1Lrc4bBbHHZtDClFbv4ABDOqNSvzq9aMas1B7QDeHUAePtl5jiZZPypzPrLtjQv-v4hvMQyHlA</recordid><startdate>20230415</startdate><enddate>20230415</enddate><creator>Tang, Haonan</creator><creator>Pasko, Sergej</creator><creator>Krotkus, Simonas</creator><creator>Anders, Thorsten</creator><creator>Wockel, Cornelia</creator><creator>Mischke, Jan</creator><creator>Wang, Xiaochen</creator><creator>Conran, Ben</creator><creator>McAleese, Clifford</creator><creator>Teo, Ken</creator><creator>Banerjee, Sreetama</creator><creator>Silva, Henry Medina</creator><creator>Morin, Pierre</creator><creator>Asselberghs, Inge</creator><creator>Ghiami, Amir</creator><creator>Grundmann, Annika</creator><creator>Tang, Songyao</creator><creator>Fiadziushkin, Hleb</creator><creator>Kalisch, Holger</creator><creator>Vescan, Andrei</creator><creator>El Kazzi, Salim</creator><creator>Marty, Alain</creator><creator>Dosenovic, Djordje</creator><creator>Okuno, Hanako</creator><creator>Le Van-Jodin, Lucie</creator><creator>Heuken, Michael</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>6I.</scope><scope>AAFTH</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0001-6718-106X</orcidid><orcidid>https://orcid.org/0000-0002-3072-1381</orcidid><orcidid>https://orcid.org/0000-0001-8384-8848</orcidid><orcidid>https://orcid.org/0000-0002-6297-9547</orcidid><orcidid>https://orcid.org/0000-0001-5709-6945</orcidid><orcidid>https://orcid.org/0000-0002-4366-9164</orcidid><orcidid>https://orcid.org/0000-0001-8991-7103</orcidid><orcidid>https://orcid.org/0000-0002-0836-7793</orcidid><orcidid>https://orcid.org/0000-0001-9465-2621</orcidid><orcidid>https://orcid.org/0000-0003-4938-6349</orcidid><orcidid>https://orcid.org/0000-0002-3486-6174</orcidid><orcidid>https://orcid.org/0000-0002-0456-7480</orcidid></search><sort><creationdate>20230415</creationdate><title>Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition</title><author>Tang, Haonan ; Pasko, Sergej ; Krotkus, Simonas ; Anders, Thorsten ; Wockel, Cornelia ; Mischke, Jan ; Wang, Xiaochen ; Conran, Ben ; McAleese, Clifford ; Teo, Ken ; Banerjee, Sreetama ; Silva, Henry Medina ; Morin, Pierre ; Asselberghs, Inge ; Ghiami, Amir ; Grundmann, Annika ; Tang, Songyao ; Fiadziushkin, Hleb ; Kalisch, Holger ; Vescan, Andrei ; El Kazzi, Salim ; Marty, Alain ; Dosenovic, Djordje ; Okuno, Hanako ; Le Van-Jodin, Lucie ; Heuken, Michael</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c394t-de3c10990eda0f1b1a219c73e7b6ab632794a02d4ba9f810cd214b6990b9ff123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>A1. 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The nucleation of tungsten disulfide WS2 crystallites and coalescence behaviour of monolayer WS2 films grown on C-plane sapphire have been studied in a commercial AIXTRON close coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor using tungsten hexacarbonyl and di-tert-butyl sulfide as precursors. The influence of sapphire substrates offcut (both orientation and angle), as well as the substrate annealing conditions and growth temperature, on the nucleation and size of the WS2 domains has been investigated. A higher nucleation temperature combined with increased substrate annealing temperatures was found to promote an increase in the WS2 domain size. The dependence of surface coverage and coalescence behaviour of the WS2 domains on the growth duration has also been determined, allowing monolayer WS2 films with < 10 % bilayer to be obtained. Crystalline quality of the coalesced WS2 films has been assessed by grazing incidence XRD and misorientation mapping using 4D-scanning transmission electron microscopy, showing a slight in-plane misorientation of the crystallites in the WS2 monolayer. The electrical performance of the coalesced WS2 films was assessed using backgated TLM structures demonstrating mobility values of up to 5 cm2/Vs and a high Ion/Ioff ratio greater than 108.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2023.127111</doi><orcidid>https://orcid.org/0000-0001-6718-106X</orcidid><orcidid>https://orcid.org/0000-0002-3072-1381</orcidid><orcidid>https://orcid.org/0000-0001-8384-8848</orcidid><orcidid>https://orcid.org/0000-0002-6297-9547</orcidid><orcidid>https://orcid.org/0000-0001-5709-6945</orcidid><orcidid>https://orcid.org/0000-0002-4366-9164</orcidid><orcidid>https://orcid.org/0000-0001-8991-7103</orcidid><orcidid>https://orcid.org/0000-0002-0836-7793</orcidid><orcidid>https://orcid.org/0000-0001-9465-2621</orcidid><orcidid>https://orcid.org/0000-0003-4938-6349</orcidid><orcidid>https://orcid.org/0000-0002-3486-6174</orcidid><orcidid>https://orcid.org/0000-0002-0456-7480</orcidid><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | A1. Crystal morphology A1. Low dimensional structures A1. Nucleation A3. Metalorganic chemical vapor deposition B1. Nanomaterials B1. Sulfides Physics |
| title | Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition |
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