Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN

In this work, we report on the importance of layer distribution after annealing to form a high quality ohmic contact on p-type GaN, using nickel (Ni) and gold (Au) thin layer association. Both the standard GaN/Ni/Au and its reverse, GaN/Au/Ni on p-type GaN were studied. The Au/Ni stack exhibits the...

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Veröffentlicht in:	Microelectronic engineering 2023-05, Vol.277, p.112020, Article 112020
Hauptverfasser:	Mauduit, Clément, Tlemcani, Taoufik Slimani, Zhang, Meiling, Yvon, Arnaud, Vivet, Nicolas, Charles, Matthew, Gwoziecki, Romain, Alquier, Daniel
Format:	Artikel
Sprache:	eng
Schlagworte:	Engineering Sciences HEMT Metal deposition Ohmic contact p-GaN Power diode Specific contact resistance
Online-Zugang:	Volltext
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