Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN

In this work, we report on the importance of layer distribution after annealing to form a high quality ohmic contact on p-type GaN, using nickel (Ni) and gold (Au) thin layer association. Both the standard GaN/Ni/Au and its reverse, GaN/Au/Ni on p-type GaN were studied. The Au/Ni stack exhibits the...

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Veröffentlicht in:Microelectronic engineering 2023-05, Vol.277, p.112020, Article 112020
Hauptverfasser: Mauduit, Clément, Tlemcani, Taoufik Slimani, Zhang, Meiling, Yvon, Arnaud, Vivet, Nicolas, Charles, Matthew, Gwoziecki, Romain, Alquier, Daniel
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container_issue
container_start_page 112020
container_title Microelectronic engineering
container_volume 277
creator Mauduit, Clément
Tlemcani, Taoufik Slimani
Zhang, Meiling
Yvon, Arnaud
Vivet, Nicolas
Charles, Matthew
Gwoziecki, Romain
Alquier, Daniel
description In this work, we report on the importance of layer distribution after annealing to form a high quality ohmic contact on p-type GaN, using nickel (Ni) and gold (Au) thin layer association. Both the standard GaN/Ni/Au and its reverse, GaN/Au/Ni on p-type GaN were studied. The Au/Ni stack exhibits the most promising results in this study. While the standard GaN/Ni/Au contact exhibits a quasi-linear current-voltage (I-V) characteristic, its counterpart, GaN/Au/Ni, shows pure ohmic behavior, with a specific contact resistance (ρc) as low as 2.0 × 10−4 Ω.cm2 after rapid thermal annealing (RTA) at 500 °C for 5 min under air ambient, equivalent to the best literature results. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses demonstrate the incomplete inversion of layers during annealing leading to a GaN/Ni/Au/NiO stack that explains why GaN/Ni/Au contact shows inferior electrical performance. On the other hand, for the GaN/Au/Ni contact annealed in the same conditions, the excellent results can be attributed to both (i) the presence of the gold layer at the interface with GaN, allowing the formation of gallide solid solution (Ga-Au) and (ii) the formation of NiO directly contacted with the p-GaN. Those two mechanisms are known to lead to the formation of good ohmic contact on p-type GaN. These results demonstrate that although GaN/Ni/Au is a standard contact for p-GaN layers, the opposite stack (GaN/Au/Ni) gives the best Ohmic behavior. This is important for achieving the best performance of GaN power diodes or transistors including a p-gate structure. [Display omitted] •The influence of layer distribution in Ni and Au based ohmic contacts on p-GaN is studied.•Standard GaN/Ni/Au contact to p-GaN did not show pure ohmic behavior.•Low resistance ohmic contact is obtained after inversion of the metal deposition sequence.•Presence of NiO and formation of gallide phases are keys to the formation of good ohmic contacts.
doi_str_mv 10.1016/j.mee.2023.112020
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Both the standard GaN/Ni/Au and its reverse, GaN/Au/Ni on p-type GaN were studied. The Au/Ni stack exhibits the most promising results in this study. While the standard GaN/Ni/Au contact exhibits a quasi-linear current-voltage (I-V) characteristic, its counterpart, GaN/Au/Ni, shows pure ohmic behavior, with a specific contact resistance (ρc) as low as 2.0 × 10−4 Ω.cm2 after rapid thermal annealing (RTA) at 500 °C for 5 min under air ambient, equivalent to the best literature results. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses demonstrate the incomplete inversion of layers during annealing leading to a GaN/Ni/Au/NiO stack that explains why GaN/Ni/Au contact shows inferior electrical performance. On the other hand, for the GaN/Au/Ni contact annealed in the same conditions, the excellent results can be attributed to both (i) the presence of the gold layer at the interface with GaN, allowing the formation of gallide solid solution (Ga-Au) and (ii) the formation of NiO directly contacted with the p-GaN. Those two mechanisms are known to lead to the formation of good ohmic contact on p-type GaN. These results demonstrate that although GaN/Ni/Au is a standard contact for p-GaN layers, the opposite stack (GaN/Au/Ni) gives the best Ohmic behavior. This is important for achieving the best performance of GaN power diodes or transistors including a p-gate structure. [Display omitted] •The influence of layer distribution in Ni and Au based ohmic contacts on p-GaN is studied.•Standard GaN/Ni/Au contact to p-GaN did not show pure ohmic behavior.•Low resistance ohmic contact is obtained after inversion of the metal deposition sequence.•Presence of NiO and formation of gallide phases are keys to the formation of good ohmic contacts.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2023.112020</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Engineering Sciences ; HEMT ; Metal deposition ; Ohmic contact ; p-GaN ; Power diode ; Specific contact resistance</subject><ispartof>Microelectronic engineering, 2023-05, Vol.277, p.112020, Article 112020</ispartof><rights>2023 Elsevier B.V.</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c374t-96581c76ee841eadbe9572612833e9aba248ee72b557ea51ddff44880e5cd6483</citedby><cites>FETCH-LOGICAL-c374t-96581c76ee841eadbe9572612833e9aba248ee72b557ea51ddff44880e5cd6483</cites><orcidid>0000-0001-5296-1303</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mee.2023.112020$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,314,780,784,885,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttps://hal.science/hal-04097297$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Mauduit, Clément</creatorcontrib><creatorcontrib>Tlemcani, Taoufik Slimani</creatorcontrib><creatorcontrib>Zhang, Meiling</creatorcontrib><creatorcontrib>Yvon, Arnaud</creatorcontrib><creatorcontrib>Vivet, Nicolas</creatorcontrib><creatorcontrib>Charles, Matthew</creatorcontrib><creatorcontrib>Gwoziecki, Romain</creatorcontrib><creatorcontrib>Alquier, Daniel</creatorcontrib><title>Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN</title><title>Microelectronic engineering</title><description>In this work, we report on the importance of layer distribution after annealing to form a high quality ohmic contact on p-type GaN, using nickel (Ni) and gold (Au) thin layer association. 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On the other hand, for the GaN/Au/Ni contact annealed in the same conditions, the excellent results can be attributed to both (i) the presence of the gold layer at the interface with GaN, allowing the formation of gallide solid solution (Ga-Au) and (ii) the formation of NiO directly contacted with the p-GaN. Those two mechanisms are known to lead to the formation of good ohmic contact on p-type GaN. These results demonstrate that although GaN/Ni/Au is a standard contact for p-GaN layers, the opposite stack (GaN/Au/Ni) gives the best Ohmic behavior. This is important for achieving the best performance of GaN power diodes or transistors including a p-gate structure. 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Both the standard GaN/Ni/Au and its reverse, GaN/Au/Ni on p-type GaN were studied. The Au/Ni stack exhibits the most promising results in this study. While the standard GaN/Ni/Au contact exhibits a quasi-linear current-voltage (I-V) characteristic, its counterpart, GaN/Au/Ni, shows pure ohmic behavior, with a specific contact resistance (ρc) as low as 2.0 × 10−4 Ω.cm2 after rapid thermal annealing (RTA) at 500 °C for 5 min under air ambient, equivalent to the best literature results. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analyses demonstrate the incomplete inversion of layers during annealing leading to a GaN/Ni/Au/NiO stack that explains why GaN/Ni/Au contact shows inferior electrical performance. On the other hand, for the GaN/Au/Ni contact annealed in the same conditions, the excellent results can be attributed to both (i) the presence of the gold layer at the interface with GaN, allowing the formation of gallide solid solution (Ga-Au) and (ii) the formation of NiO directly contacted with the p-GaN. Those two mechanisms are known to lead to the formation of good ohmic contact on p-type GaN. These results demonstrate that although GaN/Ni/Au is a standard contact for p-GaN layers, the opposite stack (GaN/Au/Ni) gives the best Ohmic behavior. This is important for achieving the best performance of GaN power diodes or transistors including a p-gate structure. [Display omitted] •The influence of layer distribution in Ni and Au based ohmic contacts on p-GaN is studied.•Standard GaN/Ni/Au contact to p-GaN did not show pure ohmic behavior.•Low resistance ohmic contact is obtained after inversion of the metal deposition sequence.•Presence of NiO and formation of gallide phases are keys to the formation of good ohmic contacts.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2023.112020</doi><orcidid>https://orcid.org/0000-0001-5296-1303</orcidid><oa>free_for_read</oa></addata></record>
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HEMT
Metal deposition
Ohmic contact
p-GaN
Power diode
Specific contact resistance
title Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN
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