n-Si/SnO2 junctions based on macroporous silicon for photoconversion

For the first time it is demonstrated that a photovoltaic junction can be formed by spraying a thin, transparent, conductive SnO2 layer onto macroporous n-type silicon produced by photoelectrochemical etching. With a macropore density of 107 cm−2, and an average pore diameter in the range 1–2 μm, th...

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Veröffentlicht in:	Solar energy materials and solar cells 1997-05, Vol.46 (2), p.101-114
Hauptverfasser:	Cachet, H., Bruneaux, J., Folcher, G., Lévy-Clément, C., Vard, C., Neumann-Spallart, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical Sciences Physics
Online-Zugang:	Volltext
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