Structure and evolution of semiconducting buffer graphene grown on SiC(0001)

Using highly controlled coverages of graphene on SiC(0001), we have studied the structure of the first graphene layer that grows on the SiC interface. This layer, known as the buffer layer, is semiconducting. Using x-ray reflectivity and x-ray standing wave analysis, we have performed a comparative...

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Veröffentlicht in:	Physical review. B 2017-11, Vol.96 (19), Article 195304
Hauptverfasser:	Conrad, M., Rault, J., Utsumi, Y., Garreau, Y., Vlad, A., Coati, A., Rueff, J.-P., Miceli, P. F., Conrad, E. H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bilayers Buffer layers Comparative studies Condensed Matter Graphene Monolayers Physics Silicon carbide Standing waves Strongly Correlated Electrons
Online-Zugang:	Volltext
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