High Spatial Resolution Thermal Mapping of Volatile Switching in NbO x ‑Based Memristor Using In Situ Scanning Thermal Microscopy

Temperature mapping by in situ thermoreflectance thermal imaging (TRTI) or midwave infrared spectroscopy has played an important role in understanding the origins of threshold switching and the effect of insulator–metal transitions in oxide-based memrsitive devices. In this study, we use scanning th...

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Veröffentlicht in:	ACS applied materials & interfaces 2022-06, Vol.14 (25), p.29025-29031
Hauptverfasser:	Nandi, Sanjoy Kumar, Puyoo, Etienne, Nath, Shimul Kanti, Albertini, David, Baboux, Nicolas, Das, Sujan Kumar, Ratcliff, Thomas, Elliman, Robert G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Functional Inorganic Materials and Devices Physics
Online-Zugang:	Volltext
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