New insights into low frequency noise (LFN) sources analysis in GaN/Si MIS-HEMTs

•Low Frequency Noise source analysis in GaN MIS-HEMT devices with and without back-barrier layer.•Extraction of Low Frequency Noise parameters in GaN MIS-HEMT devices with recessed gate.•Study verified over a large range of channel lengths and recess depth from normally-on to normally-off.•New CNF/C...

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Veröffentlicht in:	Solid-state electronics 2023-02, Vol.200, p.108555, Article 108555
Hauptverfasser:	Kom Kammeugne, R., Theodorou, C., Leroux, C., Vauche, L., Mescot, X., Gwoziecki, R., Becu, S., Charles, M., Bano, E., Ghibaudo, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	2D-electron gas Engineering Sciences GaN Low frequency noise Micro and nanotechnologies Microelectronics MIS-HEMT Noise modeling Trapping
Online-Zugang:	Volltext
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