H$_3$PO$_4$-based wet chemical etching for recovery of dry-etched GaN surfaces

The impact of several wet etchants commonly encountered in the microelectronic industry on the surface chemistry of GaN on silicon was explored. In order to get closer to fully recessed gate HEMT fabrication processes, we investigated different kinds of GaN surfaces. This study was conducted on as-g...

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Veröffentlicht in:	Applied surface science 2021-12, Vol.582
Hauptverfasser:	Benrabah, Sabria, Legallais, Maxime, Besson, Pascal, Ruel, Simon, Vauche, Laura, Pelissier, Bernard, Thieuleux, Chloé, Salem, Bassem, Charles, Matthew
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical Sciences Material chemistry
Online-Zugang:	Volltext
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