Inter-diffusion of cobalt and silicon through an ultra thin aluminum oxide layer
Optical emission spectroscopy of sputtered species during ion bombardment, Auger electron spectroscopy and high-resolution transmission electron microscopy were used to study the cobalt and silicon diffusion through the interfaces of Co/AlO/Si(0 0 1) hetero-structure. The results are discussed as a...
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| Veröffentlicht in: | Applied surface science 2010-02, Vol.256 (9), p.2731-2734 |
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| container_title | Applied surface science |
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| creator | El Asri, T. Raissi, M. Vizzini, S. Maachi, A. El Ameziane, E.L. d’Avitaya, F. Arnaud Lazzari, J.-L. Coudreau, C. Oughaddou, H. Aufray, B. Kaddouri, A. |
| description | Optical emission spectroscopy of sputtered species during ion bombardment, Auger electron spectroscopy and high-resolution transmission electron microscopy were used to study the cobalt and silicon diffusion through the interfaces of Co/AlO/Si(0
0
1) hetero-structure. The results are discussed as a function of the annealing temperature of sample and show that the diffusion process at the interfaces starts for annealing temperatures above 200
°C without detectable modification of the oxide layer. |
| doi_str_mv | 10.1016/j.apsusc.2009.11.018 |
| format | Article |
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°C without detectable modification of the oxide layer.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2009.11.018</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>AES ; Aluminum oxide layer ; Astrophysics ; Cobalt ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Diffusion ; Exact sciences and technology ; HR-TEM ; MIS structure ; Physics ; Silicon ; SIPS</subject><ispartof>Applied surface science, 2010-02, Vol.256 (9), p.2731-2734</ispartof><rights>2009 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c370t-dafb2ac4d9b543dd528637e8750828ec3d36debf1151f4131bf74f1847d9554b3</citedby><cites>FETCH-LOGICAL-c370t-dafb2ac4d9b543dd528637e8750828ec3d36debf1151f4131bf74f1847d9554b3</cites><orcidid>0000-0003-2296-5922</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.apsusc.2009.11.018$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,314,780,784,885,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22907587$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-03786432$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>El Asri, T.</creatorcontrib><creatorcontrib>Raissi, M.</creatorcontrib><creatorcontrib>Vizzini, S.</creatorcontrib><creatorcontrib>Maachi, A. El</creatorcontrib><creatorcontrib>Ameziane, E.L.</creatorcontrib><creatorcontrib>d’Avitaya, F. Arnaud</creatorcontrib><creatorcontrib>Lazzari, J.-L.</creatorcontrib><creatorcontrib>Coudreau, C.</creatorcontrib><creatorcontrib>Oughaddou, H.</creatorcontrib><creatorcontrib>Aufray, B.</creatorcontrib><creatorcontrib>Kaddouri, A.</creatorcontrib><title>Inter-diffusion of cobalt and silicon through an ultra thin aluminum oxide layer</title><title>Applied surface science</title><description>Optical emission spectroscopy of sputtered species during ion bombardment, Auger electron spectroscopy and high-resolution transmission electron microscopy were used to study the cobalt and silicon diffusion through the interfaces of Co/AlO/Si(0
0
1) hetero-structure. The results are discussed as a function of the annealing temperature of sample and show that the diffusion process at the interfaces starts for annealing temperatures above 200
°C without detectable modification of the oxide layer.</description><subject>AES</subject><subject>Aluminum oxide layer</subject><subject>Astrophysics</subject><subject>Cobalt</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Diffusion</subject><subject>Exact sciences and technology</subject><subject>HR-TEM</subject><subject>MIS structure</subject><subject>Physics</subject><subject>Silicon</subject><subject>SIPS</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PwzAURS0EEqXwDxiyMDAk-PmjcRakqgJaqRIMMFuOP6irNKnspKL_HldBHZksHd_7nt5B6B5wARhmT9tC7eMQdUEwrgqAAoO4QBMQJc05F-wSTVKsyhml5BrdxLjFGEj6naCPVdvbkBvv3BB912ady3RXq6bPVGuy6BuvE-03oRu-N4llQ9MHlYBvM9UMO98Ou6z78cZmjTracIuunGqivft7p-jr9eVzsczX72-rxXyda1riPjfK1URpZqqaM2oMJ2JGSytKjgURVlNDZ8bWDoCDY0ChdiVzIFhpKs5ZTafocZy7UY3cB79T4Sg75eVyvpYnhmkpZoySA6QsG7M6dDEG684FwPJkUG7laFCeDEoAmQym2sNY26uoVeOCarWP5y4hFS55sjhFz2POpnsP3gYZtbettsYHq3tpOv__ol-Y9Yim</recordid><startdate>20100215</startdate><enddate>20100215</enddate><creator>El Asri, T.</creator><creator>Raissi, M.</creator><creator>Vizzini, S.</creator><creator>Maachi, A. El</creator><creator>Ameziane, E.L.</creator><creator>d’Avitaya, F. Arnaud</creator><creator>Lazzari, J.-L.</creator><creator>Coudreau, C.</creator><creator>Oughaddou, H.</creator><creator>Aufray, B.</creator><creator>Kaddouri, A.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0003-2296-5922</orcidid></search><sort><creationdate>20100215</creationdate><title>Inter-diffusion of cobalt and silicon through an ultra thin aluminum oxide layer</title><author>El Asri, T. ; Raissi, M. ; Vizzini, S. ; Maachi, A. El ; Ameziane, E.L. ; d’Avitaya, F. Arnaud ; Lazzari, J.-L. ; Coudreau, C. ; Oughaddou, H. ; Aufray, B. ; Kaddouri, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c370t-dafb2ac4d9b543dd528637e8750828ec3d36debf1151f4131bf74f1847d9554b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>AES</topic><topic>Aluminum oxide layer</topic><topic>Astrophysics</topic><topic>Cobalt</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Diffusion</topic><topic>Exact sciences and technology</topic><topic>HR-TEM</topic><topic>MIS structure</topic><topic>Physics</topic><topic>Silicon</topic><topic>SIPS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>El Asri, T.</creatorcontrib><creatorcontrib>Raissi, M.</creatorcontrib><creatorcontrib>Vizzini, S.</creatorcontrib><creatorcontrib>Maachi, A. El</creatorcontrib><creatorcontrib>Ameziane, E.L.</creatorcontrib><creatorcontrib>d’Avitaya, F. Arnaud</creatorcontrib><creatorcontrib>Lazzari, J.-L.</creatorcontrib><creatorcontrib>Coudreau, C.</creatorcontrib><creatorcontrib>Oughaddou, H.</creatorcontrib><creatorcontrib>Aufray, B.</creatorcontrib><creatorcontrib>Kaddouri, A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Applied surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>El Asri, T.</au><au>Raissi, M.</au><au>Vizzini, S.</au><au>Maachi, A. El</au><au>Ameziane, E.L.</au><au>d’Avitaya, F. Arnaud</au><au>Lazzari, J.-L.</au><au>Coudreau, C.</au><au>Oughaddou, H.</au><au>Aufray, B.</au><au>Kaddouri, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Inter-diffusion of cobalt and silicon through an ultra thin aluminum oxide layer</atitle><jtitle>Applied surface science</jtitle><date>2010-02-15</date><risdate>2010</risdate><volume>256</volume><issue>9</issue><spage>2731</spage><epage>2734</epage><pages>2731-2734</pages><issn>0169-4332</issn><eissn>1873-5584</eissn><abstract>Optical emission spectroscopy of sputtered species during ion bombardment, Auger electron spectroscopy and high-resolution transmission electron microscopy were used to study the cobalt and silicon diffusion through the interfaces of Co/AlO/Si(0
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| ispartof | Applied surface science, 2010-02, Vol.256 (9), p.2731-2734 |
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| subjects | AES Aluminum oxide layer Astrophysics Cobalt Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Diffusion Exact sciences and technology HR-TEM MIS structure Physics Silicon SIPS |
| title | Inter-diffusion of cobalt and silicon through an ultra thin aluminum oxide layer |
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