Electronic and atomic structures of Ti1−xAlxN thin films related to their damage behavior

Ti and AlK-edge x-ray absorption spectroscopy is used to investigate the electronic structure of Ti1−xAlxN thin films deposited by reactive magnetron sputtering. The experimental near edge spectra of TiN and AlN are interpreted in the light of unoccupied density of state band structure calculations....

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Veröffentlicht in:	Journal of applied physics 2008-04, Vol.103 (8)
Hauptverfasser:	Tuilier, M.-H., Pac, M.-J., Gîrleanu, M., Covarel, G., Arnold, G., Louis, P., Rousselot, C., Flank, A.-M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Engineering Sciences Materials
Online-Zugang:	Volltext
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