Co distribution in ferromagnetic rutile Co-doped TiO2 thin films grown by laser ablation on silicon substrates

Pure rutile Co-doped TiO2 films were fabricated by the pulsed-laser-deposition technique on silicon substrates from a ceramic target. Under the right fabrication conditions, Co concentration in the films could be almost the same as in the target, and films under various conditions all are ferromagne...

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Veröffentlicht in:Applied physics letters 2003-10, Vol.83 (15), p.3129-3131
Hauptverfasser: Hong, Nguyen Hoa, Sakai, Joe, Prellier, W., Hassini, Awatef
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container_title Applied physics letters
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creator Hong, Nguyen Hoa
Sakai, Joe
Prellier, W.
Hassini, Awatef
description Pure rutile Co-doped TiO2 films were fabricated by the pulsed-laser-deposition technique on silicon substrates from a ceramic target. Under the right fabrication conditions, Co concentration in the films could be almost the same as in the target, and films under various conditions all are ferromagnetic well above room temperature. Even though Rutherford backscattering spectroscopy measurements show that Co atoms mostly localize near the surface of the films and exist less in deeper levels, other experimental evidence shows that the ferromagnetism does not come from Co segregations, but from the Co-doped TiO2 matrix. Rutile Ti1−xCoxO2 thin films grown by a very simple technique on low-cost silicon substrates showing a Curie temperature (TC) above 400 K appear to be very attractive to applications.
doi_str_mv 10.1063/1.1619227
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Material chemistry
Physics
title Co distribution in ferromagnetic rutile Co-doped TiO2 thin films grown by laser ablation on silicon substrates
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