Hexagonal Ge Grown by Molecular Beam Epitaxy on Self-Assisted GaAs Nanowires

Hexagonal group IV materials like silicon and germanium are expected to display remarkable optoelectronic properties for future development of photonic technologies. However, the fabrication of hexagonal group IV semiconductors within the vapor–liquid–solid method has been obtained using gold as a c...

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Veröffentlicht in:	Crystal growth & design 2022-01, Vol.22 (1), p.32-36
Hauptverfasser:	Dudko, Iuliia, Dursap, Thomas, Lamirand, Anne D, Botella, Claude, Regreny, Philippe, Danescu, Alexandre, Brottet, Solène, Bugnet, Matthieu, Walia, Sumeet, Chauvin, Nicolas, Penuelas, José
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Engineering Sciences Materials Science Micro and nanotechnologies Microelectronics Physics
Online-Zugang:	Volltext
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