Photoluminescence and photoconductivity in CdTe crystals doped with Bi
Defect levels in CdTe doped with Bi are studied by low temperature photoluminescence, photoinduced current transient spectroscopy, photoconductivity measurements, and optical absorption. Two centers associated with the doping with Bi are reported. The first one, a deep level located at E v + 0.71 eV...
Gespeichert in:
| Veröffentlicht in: | Journal of applied physics 2006-11, Vol.100 (10), p.104901-104901-6 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 104901-6 |
|---|---|
| container_issue | 10 |
| container_start_page | 104901 |
| container_title | Journal of applied physics |
| container_volume | 100 |
| creator | Saucedo, E. Ruiz, C. M. Bermúdez, V. Dieguez, E. Gombia, E. Zappettini, A. Baraldi, A. Sochinskii, N. V. |
| description | Defect levels in CdTe doped with Bi are studied by low temperature photoluminescence, photoinduced current transient spectroscopy, photoconductivity measurements, and optical absorption. Two centers associated with the doping with Bi are reported. The first one, a deep level located at
E
v
+
0.71
eV
, only present at low dopant concentrations, has donor character and hole-trap properties, and is mainly responsible for the high resistivity and very high photoconductivity of the samples. The second one, an acceptor center located at
E
v
+
0.30
eV
, assigned to
Bi
Te
species, is only present at high dopant concentrations and is mainly responsible for the low resistivity and poor photoconductivity of these samples. |
| doi_str_mv | 10.1063/1.2382668 |
| format | Article |
| fullrecord | <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_03436391v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_03436391v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c359t-fdaaff9ab3862ae298fe4a60ceecfb1c687474ae6bac95fac9a4849c7dbd12533</originalsourceid><addsrcrecordid>eNp1kE1LAzEQQIMoWKsH_0GuHrYmm91schHqYluhoId6DrP5oJE2KZu00n9vS4sexMsMPN7M4SF0T8mIEs4e6ahkouRcXKABJUIWTV2TSzQgpKSFkI28RjcpfRJCqWBygCbvy5jjarv2wSZtg7YYgsGbI9UxmK3OfufzHvuAW7OwWPf7lGGVsIkba_CXz0v87G_RlTtAe3feQ_QxeVm0s2L-Nn1tx_NCs1rmwhkA5yR0TPASbCmFsxVwoq3VrqOai6ZqKrC8Ay1rdxhQiUrqxnSGljVjQ_Rw-ruEldr0fg39XkXwajaeqyMjrGKcSbqjv67uY0q9dT8HlKhjLEXVOdbBfTq5SfsM2cfwv_ynmILAvgFy1XLC</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Photoluminescence and photoconductivity in CdTe crystals doped with Bi</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><creator>Saucedo, E. ; Ruiz, C. M. ; Bermúdez, V. ; Dieguez, E. ; Gombia, E. ; Zappettini, A. ; Baraldi, A. ; Sochinskii, N. V.</creator><creatorcontrib>Saucedo, E. ; Ruiz, C. M. ; Bermúdez, V. ; Dieguez, E. ; Gombia, E. ; Zappettini, A. ; Baraldi, A. ; Sochinskii, N. V.</creatorcontrib><description>Defect levels in CdTe doped with Bi are studied by low temperature photoluminescence, photoinduced current transient spectroscopy, photoconductivity measurements, and optical absorption. Two centers associated with the doping with Bi are reported. The first one, a deep level located at
E
v
+
0.71
eV
, only present at low dopant concentrations, has donor character and hole-trap properties, and is mainly responsible for the high resistivity and very high photoconductivity of the samples. The second one, an acceptor center located at
E
v
+
0.30
eV
, assigned to
Bi
Te
species, is only present at high dopant concentrations and is mainly responsible for the low resistivity and poor photoconductivity of these samples.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.2382668</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><subject>Condensed Matter ; Materials Science ; Physics</subject><ispartof>Journal of applied physics, 2006-11, Vol.100 (10), p.104901-104901-6</ispartof><rights>2006 American Institute of Physics</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-fdaaff9ab3862ae298fe4a60ceecfb1c687474ae6bac95fac9a4849c7dbd12533</citedby><cites>FETCH-LOGICAL-c359t-fdaaff9ab3862ae298fe4a60ceecfb1c687474ae6bac95fac9a4849c7dbd12533</cites><orcidid>0000-0001-8535-7516</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.2382668$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,780,784,794,885,1559,4512,27924,27925,76384,76390</link.rule.ids><backlink>$$Uhttps://hal.science/hal-03436391$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Saucedo, E.</creatorcontrib><creatorcontrib>Ruiz, C. M.</creatorcontrib><creatorcontrib>Bermúdez, V.</creatorcontrib><creatorcontrib>Dieguez, E.</creatorcontrib><creatorcontrib>Gombia, E.</creatorcontrib><creatorcontrib>Zappettini, A.</creatorcontrib><creatorcontrib>Baraldi, A.</creatorcontrib><creatorcontrib>Sochinskii, N. V.</creatorcontrib><title>Photoluminescence and photoconductivity in CdTe crystals doped with Bi</title><title>Journal of applied physics</title><description>Defect levels in CdTe doped with Bi are studied by low temperature photoluminescence, photoinduced current transient spectroscopy, photoconductivity measurements, and optical absorption. Two centers associated with the doping with Bi are reported. The first one, a deep level located at
E
v
+
0.71
eV
, only present at low dopant concentrations, has donor character and hole-trap properties, and is mainly responsible for the high resistivity and very high photoconductivity of the samples. The second one, an acceptor center located at
E
v
+
0.30
eV
, assigned to
Bi
Te
species, is only present at high dopant concentrations and is mainly responsible for the low resistivity and poor photoconductivity of these samples.</description><subject>Condensed Matter</subject><subject>Materials Science</subject><subject>Physics</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQQIMoWKsH_0GuHrYmm91schHqYluhoId6DrP5oJE2KZu00n9vS4sexMsMPN7M4SF0T8mIEs4e6ahkouRcXKABJUIWTV2TSzQgpKSFkI28RjcpfRJCqWBygCbvy5jjarv2wSZtg7YYgsGbI9UxmK3OfufzHvuAW7OwWPf7lGGVsIkba_CXz0v87G_RlTtAe3feQ_QxeVm0s2L-Nn1tx_NCs1rmwhkA5yR0TPASbCmFsxVwoq3VrqOai6ZqKrC8Ay1rdxhQiUrqxnSGljVjQ_Rw-ruEldr0fg39XkXwajaeqyMjrGKcSbqjv67uY0q9dT8HlKhjLEXVOdbBfTq5SfsM2cfwv_ynmILAvgFy1XLC</recordid><startdate>20061115</startdate><enddate>20061115</enddate><creator>Saucedo, E.</creator><creator>Ruiz, C. M.</creator><creator>Bermúdez, V.</creator><creator>Dieguez, E.</creator><creator>Gombia, E.</creator><creator>Zappettini, A.</creator><creator>Baraldi, A.</creator><creator>Sochinskii, N. V.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-8535-7516</orcidid></search><sort><creationdate>20061115</creationdate><title>Photoluminescence and photoconductivity in CdTe crystals doped with Bi</title><author>Saucedo, E. ; Ruiz, C. M. ; Bermúdez, V. ; Dieguez, E. ; Gombia, E. ; Zappettini, A. ; Baraldi, A. ; Sochinskii, N. V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-fdaaff9ab3862ae298fe4a60ceecfb1c687474ae6bac95fac9a4849c7dbd12533</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Condensed Matter</topic><topic>Materials Science</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Saucedo, E.</creatorcontrib><creatorcontrib>Ruiz, C. M.</creatorcontrib><creatorcontrib>Bermúdez, V.</creatorcontrib><creatorcontrib>Dieguez, E.</creatorcontrib><creatorcontrib>Gombia, E.</creatorcontrib><creatorcontrib>Zappettini, A.</creatorcontrib><creatorcontrib>Baraldi, A.</creatorcontrib><creatorcontrib>Sochinskii, N. V.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Saucedo, E.</au><au>Ruiz, C. M.</au><au>Bermúdez, V.</au><au>Dieguez, E.</au><au>Gombia, E.</au><au>Zappettini, A.</au><au>Baraldi, A.</au><au>Sochinskii, N. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoluminescence and photoconductivity in CdTe crystals doped with Bi</atitle><jtitle>Journal of applied physics</jtitle><date>2006-11-15</date><risdate>2006</risdate><volume>100</volume><issue>10</issue><spage>104901</spage><epage>104901-6</epage><pages>104901-104901-6</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Defect levels in CdTe doped with Bi are studied by low temperature photoluminescence, photoinduced current transient spectroscopy, photoconductivity measurements, and optical absorption. Two centers associated with the doping with Bi are reported. The first one, a deep level located at
E
v
+
0.71
eV
, only present at low dopant concentrations, has donor character and hole-trap properties, and is mainly responsible for the high resistivity and very high photoconductivity of the samples. The second one, an acceptor center located at
E
v
+
0.30
eV
, assigned to
Bi
Te
species, is only present at high dopant concentrations and is mainly responsible for the low resistivity and poor photoconductivity of these samples.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2382668</doi><orcidid>https://orcid.org/0000-0001-8535-7516</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2006-11, Vol.100 (10), p.104901-104901-6 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_hal_03436391v1 |
| source | AIP Journals Complete; AIP Digital Archive |
| subjects | Condensed Matter Materials Science Physics |
| title | Photoluminescence and photoconductivity in CdTe crystals doped with Bi |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T08%3A24%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photoluminescence%20and%20photoconductivity%20in%20CdTe%20crystals%20doped%20with%20Bi&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Saucedo,%20E.&rft.date=2006-11-15&rft.volume=100&rft.issue=10&rft.spage=104901&rft.epage=104901-6&rft.pages=104901-104901-6&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.2382668&rft_dat=%3Chal_cross%3Eoai_HAL_hal_03436391v1%3C/hal_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |