The onset of tapering in the early stage of growth of a nanowire

The early stage of growth of semiconductor nanowires is studied in the case where the sidewall adatoms have a short diffusion length due to a strong desorption. Experimental results are described for the growth of ZnSe nanowires by molecular beam epitaxy. They are discussed and interpreted using the...

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Veröffentlicht in:	Nanotechnology 2022-06, Vol.33 (25), p.255601
Hauptverfasser:	Raj Gosain, Saransh, Bellet-Amalric, Edith, den Hertog, Martien, André, Régis, Cibert, Joël
Format:	Artikel
Sprache:	eng
Schlagworte:	Burton–Cabrera–Frank model Condensed Matter electron microscopy Materials Science molecular beam epitaxy nanowires Physics semiconductors steps
Online-Zugang:	Volltext
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