Fast cut-off, low I 2 T and high temperature monolithic on-chip fuse on silicon substrate for new fail-safe embedded power switch

Fast cut-off, low I 2 T and high temperature monolithic on-chip fuse on silicon substrate for new fail-safe embedded power switch

In this paper, a first concept of monolithic semiconductor fuses on silicon substrate, is realized and experimentally characterized. These new compact devices are, able to perform fast and irreversible current cutoff at medium voltage (200V), relatively high current (10A), with very low pre-arcing t...

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Veröffentlicht in:Microelectronics and reliability 2021
Hauptverfasser: Oumaziz, Amirouche, Sarraute, Emmanuel, Richardeau, Frédéric, Bourennane, Abdelhakim, Combettes, Céline, Bley, Vincent, Ghannam, Ayad
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Electric power
Engineering Sciences
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container_title Microelectronics and reliability
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creator Oumaziz, Amirouche
Sarraute, Emmanuel
Richardeau, Frédéric
Bourennane, Abdelhakim
Combettes, Céline
Bley, Vincent
Ghannam, Ayad
description In this paper, a first concept of monolithic semiconductor fuses on silicon substrate, is realized and experimentally characterized. These new compact devices are, able to perform fast and irreversible current cutoff at medium voltage (200V), relatively high current (10A), with very low pre-arcing time (~ 4 µs to 5 µs). The fuses are intended for fail-safe power converter capabilities applications. Design and 3D simulation by finite elements method, taking into account static and dynamic specifications have been carried out. Thermal management in steady state is improved by dielectric epoxy thermal insulation under each constriction of the fuse. Implementation and practical tests are reported.
doi_str_mv 10.1016/j.microrel.2021.114240
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subjects Electric power
Engineering Sciences
title Fast cut-off, low I 2 T and high temperature monolithic on-chip fuse on silicon substrate for new fail-safe embedded power switch
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