Growth of Ge epilayers using iso-butylgermane (IBGe) and its memory effect in an III-V chemical beam epitaxy reactor

•First report of high crystalline germanium (Ge) grown by chemical beam epitaxy.•No impact of Ge memory effect on GaAs crystalline properties.•Ge growth results in n-type GaAs epilayers with higher doping.•Ge doping in GaAs induces a blueshift and a broadening of the excitonic transition.•Decrease o...

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Veröffentlicht in:Journal of crystal growth 2020-10, Vol.547 (2), p.125807, Article 125807
Hauptverfasser: Poungoué Mbeunmi, Alex Brice, Arvinte, Roxana, Pelletier, Hubert, Jellite, Mourad, Arès, Richard, Fafard, Simon, Boucherif, Abderraouf
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container_issue 2
container_start_page 125807
container_title Journal of crystal growth
container_volume 547
creator Poungoué Mbeunmi, Alex Brice
Arvinte, Roxana
Pelletier, Hubert
Jellite, Mourad
Arès, Richard
Fafard, Simon
Boucherif, Abderraouf
description •First report of high crystalline germanium (Ge) grown by chemical beam epitaxy.•No impact of Ge memory effect on GaAs crystalline properties.•Ge growth results in n-type GaAs epilayers with higher doping.•Ge doping in GaAs induces a blueshift and a broadening of the excitonic transition.•Decrease of Ge background doping in GaAs layer by more than one order of magnitude. Employing group IV semiconductors as germanium (Ge) and III-V compounds as heterostructures it enables efficient devices such as triple junction solar cells, thermophotovoltaic and infrared detection devices. In this work, we studied the growth of Ge with iso-butylgermane (IBGe) as germanium source and the Ge memory effect in our VG Semicon V90F 4-inch chemical beam epitaxy (CBE) reactor for III-V materials. High crystalline quality Ge epilayers were grown on GaAs substrates, while a Ge background doping in the range of 5 × 1018 cm−3 has been found in the GaAs epilayers. The low temperature photoluminescence (LTPL) spectra showed that the Ge background leads to a blueshift and broadening of the exitonic transition in the grown GaAs layers. To eliminate the Ge memory effect several approaches of chamber bake have been investigated, and a reduction of more than one order of magnitude have been demonstrated. Hall effect and secondary ion mass spectroscopy (SIMS) measurements corroborate the reduction in Ge background doping in GaAs epilayers down to 1 × 1017 cm−3.
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Employing group IV semiconductors as germanium (Ge) and III-V compounds as heterostructures it enables efficient devices such as triple junction solar cells, thermophotovoltaic and infrared detection devices. In this work, we studied the growth of Ge with iso-butylgermane (IBGe) as germanium source and the Ge memory effect in our VG Semicon V90F 4-inch chemical beam epitaxy (CBE) reactor for III-V materials. High crystalline quality Ge epilayers were grown on GaAs substrates, while a Ge background doping in the range of 5 × 1018 cm−3 has been found in the GaAs epilayers. The low temperature photoluminescence (LTPL) spectra showed that the Ge background leads to a blueshift and broadening of the exitonic transition in the grown GaAs layers. To eliminate the Ge memory effect several approaches of chamber bake have been investigated, and a reduction of more than one order of magnitude have been demonstrated. Hall effect and secondary ion mass spectroscopy (SIMS) measurements corroborate the reduction in Ge background doping in GaAs epilayers down to 1 × 1017 cm−3.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2020.125807</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Doping ; A3. Chemical beam epitaxy ; B1. IBGe ; B2. Semiconducting gallium arsenide ; B2. 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Employing group IV semiconductors as germanium (Ge) and III-V compounds as heterostructures it enables efficient devices such as triple junction solar cells, thermophotovoltaic and infrared detection devices. In this work, we studied the growth of Ge with iso-butylgermane (IBGe) as germanium source and the Ge memory effect in our VG Semicon V90F 4-inch chemical beam epitaxy (CBE) reactor for III-V materials. High crystalline quality Ge epilayers were grown on GaAs substrates, while a Ge background doping in the range of 5 × 1018 cm−3 has been found in the GaAs epilayers. The low temperature photoluminescence (LTPL) spectra showed that the Ge background leads to a blueshift and broadening of the exitonic transition in the grown GaAs layers. To eliminate the Ge memory effect several approaches of chamber bake have been investigated, and a reduction of more than one order of magnitude have been demonstrated. Hall effect and secondary ion mass spectroscopy (SIMS) measurements corroborate the reduction in Ge background doping in GaAs epilayers down to 1 × 1017 cm−3.</description><subject>A1. Doping</subject><subject>A3. Chemical beam epitaxy</subject><subject>B1. IBGe</subject><subject>B2. Semiconducting gallium arsenide</subject><subject>B2. Semiconducting germanium</subject><subject>Blue shift</subject><subject>Doping</subject><subject>Engineering Sciences</subject><subject>Germanium</subject><subject>Group III-V semiconductors</subject><subject>Hall effect</subject><subject>Heterostructures</subject><subject>Low temperature</subject><subject>Molecular beam epitaxy</subject><subject>Photoluminescence</subject><subject>Photovoltaic cells</subject><subject>Reduction</subject><subject>Secondary ion mass spectroscopy</subject><subject>Solar cells</subject><subject>Spectrum analysis</subject><subject>Substrates</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqFUctu2zAQJIoGqJvkFwoCvSQHuXxJpG9Jg9YRYKCXJFeCplY2BUl0SNqp_r40lPbayy4wOzPY3UHoCyVLSmj1rVt2NkxxF_ySEZZBVioiP6AFVZIXJSHsI1rkygrChPqEPsfYEZKVlCxQWgf_lvbYt3gNGA6uNxOEiI_RjTvsoi-2xzT1OwiDGQHf1N_XcIvN2GCXIh5g8GHC0LZgE3ZjHuC6rosXbPcwOGt6vAUznH2T-T3hAMYmH67QRWv6CNfv_RI9__zx9PBYbH6t64f7TWG5FKloqBHKAgFKqaGVYCVfrcrGtIqX0vKqZZZYKYSwnNqKMkqUbO1WCtiqUoLil-h29t2bXh-CG0yYtDdOP95v9BkjnAsqlDjRzP06cw_Bvx4hJt35YxjzepqJilVSlGqVWdXMssHHGKD9Z0uJPqehO_03DX1OQ89pZOHdLIR878lB0NE6GC00LuTf6ca7_1n8ASKqlMQ</recordid><startdate>20201001</startdate><enddate>20201001</enddate><creator>Poungoué Mbeunmi, Alex Brice</creator><creator>Arvinte, Roxana</creator><creator>Pelletier, Hubert</creator><creator>Jellite, Mourad</creator><creator>Arès, Richard</creator><creator>Fafard, Simon</creator><creator>Boucherif, Abderraouf</creator><general>Elsevier B.V</general><general>Elsevier BV</general><general>Elsevier</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-9693-6054</orcidid><orcidid>https://orcid.org/0000-0001-9758-1857</orcidid><orcidid>https://orcid.org/0000-0001-7697-9735</orcidid></search><sort><creationdate>20201001</creationdate><title>Growth of Ge epilayers using iso-butylgermane (IBGe) and its memory effect in an III-V chemical beam epitaxy reactor</title><author>Poungoué Mbeunmi, Alex Brice ; Arvinte, Roxana ; Pelletier, Hubert ; Jellite, Mourad ; Arès, Richard ; Fafard, Simon ; Boucherif, Abderraouf</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c374t-d1a48ce0e111a164253995daf8357c36f2c0c7444c31c6121087fcb74eb857e83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>A1. Doping</topic><topic>A3. Chemical beam epitaxy</topic><topic>B1. IBGe</topic><topic>B2. Semiconducting gallium arsenide</topic><topic>B2. Semiconducting germanium</topic><topic>Blue shift</topic><topic>Doping</topic><topic>Engineering Sciences</topic><topic>Germanium</topic><topic>Group III-V semiconductors</topic><topic>Hall effect</topic><topic>Heterostructures</topic><topic>Low temperature</topic><topic>Molecular beam epitaxy</topic><topic>Photoluminescence</topic><topic>Photovoltaic cells</topic><topic>Reduction</topic><topic>Secondary ion mass spectroscopy</topic><topic>Solar cells</topic><topic>Spectrum analysis</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Poungoué Mbeunmi, Alex Brice</creatorcontrib><creatorcontrib>Arvinte, Roxana</creatorcontrib><creatorcontrib>Pelletier, Hubert</creatorcontrib><creatorcontrib>Jellite, Mourad</creatorcontrib><creatorcontrib>Arès, Richard</creatorcontrib><creatorcontrib>Fafard, Simon</creatorcontrib><creatorcontrib>Boucherif, Abderraouf</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Poungoué Mbeunmi, Alex Brice</au><au>Arvinte, Roxana</au><au>Pelletier, Hubert</au><au>Jellite, Mourad</au><au>Arès, Richard</au><au>Fafard, Simon</au><au>Boucherif, Abderraouf</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of Ge epilayers using iso-butylgermane (IBGe) and its memory effect in an III-V chemical beam epitaxy reactor</atitle><jtitle>Journal of crystal growth</jtitle><date>2020-10-01</date><risdate>2020</risdate><volume>547</volume><issue>2</issue><spage>125807</spage><pages>125807-</pages><artnum>125807</artnum><issn>0022-0248</issn><eissn>1873-5002</eissn><abstract>•First report of high crystalline germanium (Ge) grown by chemical beam epitaxy.•No impact of Ge memory effect on GaAs crystalline properties.•Ge growth results in n-type GaAs epilayers with higher doping.•Ge doping in GaAs induces a blueshift and a broadening of the excitonic transition.•Decrease of Ge background doping in GaAs layer by more than one order of magnitude. Employing group IV semiconductors as germanium (Ge) and III-V compounds as heterostructures it enables efficient devices such as triple junction solar cells, thermophotovoltaic and infrared detection devices. In this work, we studied the growth of Ge with iso-butylgermane (IBGe) as germanium source and the Ge memory effect in our VG Semicon V90F 4-inch chemical beam epitaxy (CBE) reactor for III-V materials. High crystalline quality Ge epilayers were grown on GaAs substrates, while a Ge background doping in the range of 5 × 1018 cm−3 has been found in the GaAs epilayers. The low temperature photoluminescence (LTPL) spectra showed that the Ge background leads to a blueshift and broadening of the exitonic transition in the grown GaAs layers. To eliminate the Ge memory effect several approaches of chamber bake have been investigated, and a reduction of more than one order of magnitude have been demonstrated. Hall effect and secondary ion mass spectroscopy (SIMS) measurements corroborate the reduction in Ge background doping in GaAs epilayers down to 1 × 1017 cm−3.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2020.125807</doi><orcidid>https://orcid.org/0000-0001-9693-6054</orcidid><orcidid>https://orcid.org/0000-0001-9758-1857</orcidid><orcidid>https://orcid.org/0000-0001-7697-9735</orcidid></addata></record>
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1873-5002
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source Elsevier ScienceDirect Journals
subjects A1. Doping
A3. Chemical beam epitaxy
B1. IBGe
B2. Semiconducting gallium arsenide
B2. Semiconducting germanium
Blue shift
Doping
Engineering Sciences
Germanium
Group III-V semiconductors
Hall effect
Heterostructures
Low temperature
Molecular beam epitaxy
Photoluminescence
Photovoltaic cells
Reduction
Secondary ion mass spectroscopy
Solar cells
Spectrum analysis
Substrates
title Growth of Ge epilayers using iso-butylgermane (IBGe) and its memory effect in an III-V chemical beam epitaxy reactor
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