Growth of Ge epilayers using iso-butylgermane (IBGe) and its memory effect in an III-V chemical beam epitaxy reactor
•First report of high crystalline germanium (Ge) grown by chemical beam epitaxy.•No impact of Ge memory effect on GaAs crystalline properties.•Ge growth results in n-type GaAs epilayers with higher doping.•Ge doping in GaAs induces a blueshift and a broadening of the excitonic transition.•Decrease o...
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description | •First report of high crystalline germanium (Ge) grown by chemical beam epitaxy.•No impact of Ge memory effect on GaAs crystalline properties.•Ge growth results in n-type GaAs epilayers with higher doping.•Ge doping in GaAs induces a blueshift and a broadening of the excitonic transition.•Decrease of Ge background doping in GaAs layer by more than one order of magnitude.
Employing group IV semiconductors as germanium (Ge) and III-V compounds as heterostructures it enables efficient devices such as triple junction solar cells, thermophotovoltaic and infrared detection devices. In this work, we studied the growth of Ge with iso-butylgermane (IBGe) as germanium source and the Ge memory effect in our VG Semicon V90F 4-inch chemical beam epitaxy (CBE) reactor for III-V materials. High crystalline quality Ge epilayers were grown on GaAs substrates, while a Ge background doping in the range of 5 × 1018 cm−3 has been found in the GaAs epilayers. The low temperature photoluminescence (LTPL) spectra showed that the Ge background leads to a blueshift and broadening of the exitonic transition in the grown GaAs layers. To eliminate the Ge memory effect several approaches of chamber bake have been investigated, and a reduction of more than one order of magnitude have been demonstrated. Hall effect and secondary ion mass spectroscopy (SIMS) measurements corroborate the reduction in Ge background doping in GaAs epilayers down to 1 × 1017 cm−3. |
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fullrecord | <record><control><sourceid>proquest_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_03341484v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024820303304</els_id><sourcerecordid>2462674589</sourcerecordid><originalsourceid>FETCH-LOGICAL-c374t-d1a48ce0e111a164253995daf8357c36f2c0c7444c31c6121087fcb74eb857e83</originalsourceid><addsrcrecordid>eNqFUctu2zAQJIoGqJvkFwoCvSQHuXxJpG9Jg9YRYKCXJFeCplY2BUl0SNqp_r40lPbayy4wOzPY3UHoCyVLSmj1rVt2NkxxF_ySEZZBVioiP6AFVZIXJSHsI1rkygrChPqEPsfYEZKVlCxQWgf_lvbYt3gNGA6uNxOEiI_RjTvsoi-2xzT1OwiDGQHf1N_XcIvN2GCXIh5g8GHC0LZgE3ZjHuC6rosXbPcwOGt6vAUznH2T-T3hAMYmH67QRWv6CNfv_RI9__zx9PBYbH6t64f7TWG5FKloqBHKAgFKqaGVYCVfrcrGtIqX0vKqZZZYKYSwnNqKMkqUbO1WCtiqUoLil-h29t2bXh-CG0yYtDdOP95v9BkjnAsqlDjRzP06cw_Bvx4hJt35YxjzepqJilVSlGqVWdXMssHHGKD9Z0uJPqehO_03DX1OQ89pZOHdLIR878lB0NE6GC00LuTf6ca7_1n8ASKqlMQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2462674589</pqid></control><display><type>article</type><title>Growth of Ge epilayers using iso-butylgermane (IBGe) and its memory effect in an III-V chemical beam epitaxy reactor</title><source>Elsevier ScienceDirect Journals</source><creator>Poungoué Mbeunmi, Alex Brice ; Arvinte, Roxana ; Pelletier, Hubert ; Jellite, Mourad ; Arès, Richard ; Fafard, Simon ; Boucherif, Abderraouf</creator><creatorcontrib>Poungoué Mbeunmi, Alex Brice ; Arvinte, Roxana ; Pelletier, Hubert ; Jellite, Mourad ; Arès, Richard ; Fafard, Simon ; Boucherif, Abderraouf</creatorcontrib><description>•First report of high crystalline germanium (Ge) grown by chemical beam epitaxy.•No impact of Ge memory effect on GaAs crystalline properties.•Ge growth results in n-type GaAs epilayers with higher doping.•Ge doping in GaAs induces a blueshift and a broadening of the excitonic transition.•Decrease of Ge background doping in GaAs layer by more than one order of magnitude.
Employing group IV semiconductors as germanium (Ge) and III-V compounds as heterostructures it enables efficient devices such as triple junction solar cells, thermophotovoltaic and infrared detection devices. In this work, we studied the growth of Ge with iso-butylgermane (IBGe) as germanium source and the Ge memory effect in our VG Semicon V90F 4-inch chemical beam epitaxy (CBE) reactor for III-V materials. High crystalline quality Ge epilayers were grown on GaAs substrates, while a Ge background doping in the range of 5 × 1018 cm−3 has been found in the GaAs epilayers. The low temperature photoluminescence (LTPL) spectra showed that the Ge background leads to a blueshift and broadening of the exitonic transition in the grown GaAs layers. To eliminate the Ge memory effect several approaches of chamber bake have been investigated, and a reduction of more than one order of magnitude have been demonstrated. Hall effect and secondary ion mass spectroscopy (SIMS) measurements corroborate the reduction in Ge background doping in GaAs epilayers down to 1 × 1017 cm−3.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2020.125807</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Doping ; A3. Chemical beam epitaxy ; B1. IBGe ; B2. Semiconducting gallium arsenide ; B2. Semiconducting germanium ; Blue shift ; Doping ; Engineering Sciences ; Germanium ; Group III-V semiconductors ; Hall effect ; Heterostructures ; Low temperature ; Molecular beam epitaxy ; Photoluminescence ; Photovoltaic cells ; Reduction ; Secondary ion mass spectroscopy ; Solar cells ; Spectrum analysis ; Substrates</subject><ispartof>Journal of crystal growth, 2020-10, Vol.547 (2), p.125807, Article 125807</ispartof><rights>2020 Elsevier B.V.</rights><rights>Copyright Elsevier BV Oct 1, 2020</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c374t-d1a48ce0e111a164253995daf8357c36f2c0c7444c31c6121087fcb74eb857e83</citedby><cites>FETCH-LOGICAL-c374t-d1a48ce0e111a164253995daf8357c36f2c0c7444c31c6121087fcb74eb857e83</cites><orcidid>0000-0001-9693-6054 ; 0000-0001-9758-1857 ; 0000-0001-7697-9735</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0022024820303304$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,314,776,780,881,3537,27903,27904,65309</link.rule.ids><backlink>$$Uhttps://hal.science/hal-03341484$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Poungoué Mbeunmi, Alex Brice</creatorcontrib><creatorcontrib>Arvinte, Roxana</creatorcontrib><creatorcontrib>Pelletier, Hubert</creatorcontrib><creatorcontrib>Jellite, Mourad</creatorcontrib><creatorcontrib>Arès, Richard</creatorcontrib><creatorcontrib>Fafard, Simon</creatorcontrib><creatorcontrib>Boucherif, Abderraouf</creatorcontrib><title>Growth of Ge epilayers using iso-butylgermane (IBGe) and its memory effect in an III-V chemical beam epitaxy reactor</title><title>Journal of crystal growth</title><description>•First report of high crystalline germanium (Ge) grown by chemical beam epitaxy.•No impact of Ge memory effect on GaAs crystalline properties.•Ge growth results in n-type GaAs epilayers with higher doping.•Ge doping in GaAs induces a blueshift and a broadening of the excitonic transition.•Decrease of Ge background doping in GaAs layer by more than one order of magnitude.
Employing group IV semiconductors as germanium (Ge) and III-V compounds as heterostructures it enables efficient devices such as triple junction solar cells, thermophotovoltaic and infrared detection devices. In this work, we studied the growth of Ge with iso-butylgermane (IBGe) as germanium source and the Ge memory effect in our VG Semicon V90F 4-inch chemical beam epitaxy (CBE) reactor for III-V materials. High crystalline quality Ge epilayers were grown on GaAs substrates, while a Ge background doping in the range of 5 × 1018 cm−3 has been found in the GaAs epilayers. The low temperature photoluminescence (LTPL) spectra showed that the Ge background leads to a blueshift and broadening of the exitonic transition in the grown GaAs layers. To eliminate the Ge memory effect several approaches of chamber bake have been investigated, and a reduction of more than one order of magnitude have been demonstrated. Hall effect and secondary ion mass spectroscopy (SIMS) measurements corroborate the reduction in Ge background doping in GaAs epilayers down to 1 × 1017 cm−3.</description><subject>A1. Doping</subject><subject>A3. Chemical beam epitaxy</subject><subject>B1. IBGe</subject><subject>B2. Semiconducting gallium arsenide</subject><subject>B2. Semiconducting germanium</subject><subject>Blue shift</subject><subject>Doping</subject><subject>Engineering Sciences</subject><subject>Germanium</subject><subject>Group III-V semiconductors</subject><subject>Hall effect</subject><subject>Heterostructures</subject><subject>Low temperature</subject><subject>Molecular beam epitaxy</subject><subject>Photoluminescence</subject><subject>Photovoltaic cells</subject><subject>Reduction</subject><subject>Secondary ion mass spectroscopy</subject><subject>Solar cells</subject><subject>Spectrum analysis</subject><subject>Substrates</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqFUctu2zAQJIoGqJvkFwoCvSQHuXxJpG9Jg9YRYKCXJFeCplY2BUl0SNqp_r40lPbayy4wOzPY3UHoCyVLSmj1rVt2NkxxF_ySEZZBVioiP6AFVZIXJSHsI1rkygrChPqEPsfYEZKVlCxQWgf_lvbYt3gNGA6uNxOEiI_RjTvsoi-2xzT1OwiDGQHf1N_XcIvN2GCXIh5g8GHC0LZgE3ZjHuC6rosXbPcwOGt6vAUznH2T-T3hAMYmH67QRWv6CNfv_RI9__zx9PBYbH6t64f7TWG5FKloqBHKAgFKqaGVYCVfrcrGtIqX0vKqZZZYKYSwnNqKMkqUbO1WCtiqUoLil-h29t2bXh-CG0yYtDdOP95v9BkjnAsqlDjRzP06cw_Bvx4hJt35YxjzepqJilVSlGqVWdXMssHHGKD9Z0uJPqehO_03DX1OQ89pZOHdLIR878lB0NE6GC00LuTf6ca7_1n8ASKqlMQ</recordid><startdate>20201001</startdate><enddate>20201001</enddate><creator>Poungoué Mbeunmi, Alex Brice</creator><creator>Arvinte, Roxana</creator><creator>Pelletier, Hubert</creator><creator>Jellite, Mourad</creator><creator>Arès, Richard</creator><creator>Fafard, Simon</creator><creator>Boucherif, Abderraouf</creator><general>Elsevier B.V</general><general>Elsevier BV</general><general>Elsevier</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-9693-6054</orcidid><orcidid>https://orcid.org/0000-0001-9758-1857</orcidid><orcidid>https://orcid.org/0000-0001-7697-9735</orcidid></search><sort><creationdate>20201001</creationdate><title>Growth of Ge epilayers using iso-butylgermane (IBGe) and its memory effect in an III-V chemical beam epitaxy reactor</title><author>Poungoué Mbeunmi, Alex Brice ; Arvinte, Roxana ; Pelletier, Hubert ; Jellite, Mourad ; Arès, Richard ; Fafard, Simon ; Boucherif, Abderraouf</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c374t-d1a48ce0e111a164253995daf8357c36f2c0c7444c31c6121087fcb74eb857e83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>A1. Doping</topic><topic>A3. Chemical beam epitaxy</topic><topic>B1. IBGe</topic><topic>B2. Semiconducting gallium arsenide</topic><topic>B2. Semiconducting germanium</topic><topic>Blue shift</topic><topic>Doping</topic><topic>Engineering Sciences</topic><topic>Germanium</topic><topic>Group III-V semiconductors</topic><topic>Hall effect</topic><topic>Heterostructures</topic><topic>Low temperature</topic><topic>Molecular beam epitaxy</topic><topic>Photoluminescence</topic><topic>Photovoltaic cells</topic><topic>Reduction</topic><topic>Secondary ion mass spectroscopy</topic><topic>Solar cells</topic><topic>Spectrum analysis</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Poungoué Mbeunmi, Alex Brice</creatorcontrib><creatorcontrib>Arvinte, Roxana</creatorcontrib><creatorcontrib>Pelletier, Hubert</creatorcontrib><creatorcontrib>Jellite, Mourad</creatorcontrib><creatorcontrib>Arès, Richard</creatorcontrib><creatorcontrib>Fafard, Simon</creatorcontrib><creatorcontrib>Boucherif, Abderraouf</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Poungoué Mbeunmi, Alex Brice</au><au>Arvinte, Roxana</au><au>Pelletier, Hubert</au><au>Jellite, Mourad</au><au>Arès, Richard</au><au>Fafard, Simon</au><au>Boucherif, Abderraouf</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of Ge epilayers using iso-butylgermane (IBGe) and its memory effect in an III-V chemical beam epitaxy reactor</atitle><jtitle>Journal of crystal growth</jtitle><date>2020-10-01</date><risdate>2020</risdate><volume>547</volume><issue>2</issue><spage>125807</spage><pages>125807-</pages><artnum>125807</artnum><issn>0022-0248</issn><eissn>1873-5002</eissn><abstract>•First report of high crystalline germanium (Ge) grown by chemical beam epitaxy.•No impact of Ge memory effect on GaAs crystalline properties.•Ge growth results in n-type GaAs epilayers with higher doping.•Ge doping in GaAs induces a blueshift and a broadening of the excitonic transition.•Decrease of Ge background doping in GaAs layer by more than one order of magnitude.
Employing group IV semiconductors as germanium (Ge) and III-V compounds as heterostructures it enables efficient devices such as triple junction solar cells, thermophotovoltaic and infrared detection devices. In this work, we studied the growth of Ge with iso-butylgermane (IBGe) as germanium source and the Ge memory effect in our VG Semicon V90F 4-inch chemical beam epitaxy (CBE) reactor for III-V materials. High crystalline quality Ge epilayers were grown on GaAs substrates, while a Ge background doping in the range of 5 × 1018 cm−3 has been found in the GaAs epilayers. The low temperature photoluminescence (LTPL) spectra showed that the Ge background leads to a blueshift and broadening of the exitonic transition in the grown GaAs layers. To eliminate the Ge memory effect several approaches of chamber bake have been investigated, and a reduction of more than one order of magnitude have been demonstrated. Hall effect and secondary ion mass spectroscopy (SIMS) measurements corroborate the reduction in Ge background doping in GaAs epilayers down to 1 × 1017 cm−3.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2020.125807</doi><orcidid>https://orcid.org/0000-0001-9693-6054</orcidid><orcidid>https://orcid.org/0000-0001-9758-1857</orcidid><orcidid>https://orcid.org/0000-0001-7697-9735</orcidid></addata></record> |
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subjects | A1. Doping A3. Chemical beam epitaxy B1. IBGe B2. Semiconducting gallium arsenide B2. Semiconducting germanium Blue shift Doping Engineering Sciences Germanium Group III-V semiconductors Hall effect Heterostructures Low temperature Molecular beam epitaxy Photoluminescence Photovoltaic cells Reduction Secondary ion mass spectroscopy Solar cells Spectrum analysis Substrates |
title | Growth of Ge epilayers using iso-butylgermane (IBGe) and its memory effect in an III-V chemical beam epitaxy reactor |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T02%3A16%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%20Ge%20epilayers%20using%20iso-butylgermane%20(IBGe)%20and%20its%20memory%20effect%20in%20an%20III-V%20chemical%20beam%20epitaxy%20reactor&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Poungou%C3%A9%20Mbeunmi,%20Alex%20Brice&rft.date=2020-10-01&rft.volume=547&rft.issue=2&rft.spage=125807&rft.pages=125807-&rft.artnum=125807&rft.issn=0022-0248&rft.eissn=1873-5002&rft_id=info:doi/10.1016/j.jcrysgro.2020.125807&rft_dat=%3Cproquest_hal_p%3E2462674589%3C/proquest_hal_p%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2462674589&rft_id=info:pmid/&rft_els_id=S0022024820303304&rfr_iscdi=true |