The Role of Dimensionality on the Optoelectronic Properties of Oxide and Halide Perovskites, and their Halide Derivatives

Halide perovskite semiconductors have risen to prominence in photovoltaics and light‐emitting diodes (LEDs), but traditional oxide perovskites, which overcome the stability limitations of their halide counterparts, have also recently witnessed a rise in potential as solar absorbers. One of the many important factors underpinning these developments is an understanding of the role of dimensionality on the optoelectronic properties and, consequently, on the performance of the materials in photovoltaics and LEDs. This review article examines the role of structural and electronic dimensionality, as well as form factor, in oxide and halide perovskites, and in lead‐free alternatives to halide perovskites. Insights into how dimensionality influences the band gap, stability, charge‐carrier transport, recombination processes and defect tolerance of the materials, and the impact these parameters have on device performance are brought forward. Particular emphasis is placed on carrier/exciton‐phonon coupling, which plays a significant role in the materials considered, owing to their soft lattices and composition of heavy elements, and becomes more prominent as dimensionality is reduced. It is finished with a discussion of the implications on the classes of materials future efforts should focus on, as well as the key questions that need to be addressed. Halide perovskites have rapidly risen to prominence in photovoltaics and light‐emitting diodes, but suffer from stability and toxicity challenges. These could be overcome with emerging oxide perovskites and lead‐free perovskite‐inspired materials. Here, the role of dimensionality on their optoelectronic properties and carrier/exciton‐phonon coupling, as well as the effect on device performance and stability, is examined.