Quantitative determination of In clustering in In-rich In x Ga 1−x N thin films

We investigated atomic ordering in In-rich In x Ga 1− x N epilayers in order to obtain an understanding of whether a deviation from a random distribution of In atoms in the group-III sublattice could be the origin of the strong carrier localization and defect-insensitive emission of these semiconduc...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2014-10, Vol.47 (41), p.415301
Hauptverfasser:	Shang, Xiaoxia, Luca, Marta De, Pettinari, Giorgio, Bisognin, Gabriele, Amidani, Lucia, Fonda, Emiliano, Boscherini, Federico, Berti, Marina, Ciatto, Gianluca
Format:	Artikel
Sprache:	eng
Schlagworte:	Continental interfaces, environment Ocean, Atmosphere Sciences of the Universe
Online-Zugang:	Volltext
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