Identification of (Tb,Eu) 9.43 (SiO 4 ) 6 O 2-δ Oxy-Apatite Structures as Nanometric Inclusions in Annealed (Eu,Tb)-Doped ZnO/Si Junctions: Combined Electron Diffraction and Chemical Contrast Imaging Studies

(Tb,Eu)-doped ZnO-annealed films at 1100 °C showed intense photoluminescense (PL) emission from Eu and Tb ions. The high-temperature annealing led to a chemical segregation and a secondary Zn-free phase formation that is suspected to be responsible for the high PL intensity. Large faceted inclusions...

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Veröffentlicht in:Inorganic chemistry 2021-04, Vol.60 (7), p.4508-4516
Hauptverfasser: Leroux, Chris, Guillaume, Clément, Labbé, Christophe, Portier, Xavier, Pelloquin, Denis
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Sprache:eng
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