Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities

[Display omitted] •Oxygen and carbon impurities diffusion during melt laser annealing.•Identification and localization of optical defects signatures.•Impact of the surface oxide on the impurities diffusion. In this work, we present a comprehensive investigation of impurities contamination in silicon...

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Veröffentlicht in:	Applied surface science 2021-04, Vol.546, p.149071, Article 149071
Hauptverfasser:	Monflier, R., Tabata, T., Rizk, H., Roul, J., Huet, K., Mazzamuto, F., Acosta Alba, P., Kerdilès, S., Boninelli, S., La Magna, A., Scheid, E., Cristiano, F., Bedel-Pereira, E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Defects Engineering Sciences FTIR Impurities Materials Science Melt laser annealing Micro and nanotechnologies Microelectronics Photoluminescence Physics SIMS
Online-Zugang:	Volltext
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