Indium segregation mechanism and V-defects formation on (0001) InAlN surface: an ab-initio investigation

First principle calculations were performed to investigate adsorption and diffusion of indium and aluminum atoms on (0001) and (0001 ̅) In (18%) AlN surfaces. First, it was shown that these surfaces are most stable when they contain complex defects. The presence of vacancies causes the In to be stro...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2020-10, Vol.54 (1)
Hauptverfasser:	Mohamad, Ranim, Ruterana, Pierre
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Materials Science Physics
Online-Zugang:	Volltext
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