Resistance switching in large-area vertical junctions of the molecular spin crossover complex [Fe(HB(tz) 3 ) 2 ]: ON/OFF ratios and device stability

Resistance switching in large-area vertical junctions of the molecular spin crossover complex [Fe(HB(tz) 3 ) 2 ]: ON/OFF ratios and device stability

Multilayer crossbar junctions composed of ITO/[Fe(HB(1,2,4-triazol-1-yl) ) ]/M (with M  =  Al or Ca) were fabricated and investigated for their resistance switching properties. Current-voltage-temperature maps revealed ON/OFF resistance ratios as high as 400, with the ON and OFF states defined, resp...

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Veröffentlicht in:Journal of physics. Condensed matter 2020-05, Vol.32 (21), p.214010-214010
Hauptverfasser: Zhang, Yuteng, Séguy, Isabelle, Ridier, Karl, Shalabaeva, Victoria, Piedrahita-Bello, Mario, Rotaru, Aurelian, Salmon, Lionel, Molnár, Gábor, Bousseksou, Azzedine
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Micro and nanotechnologies
Microelectronics
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container_end_page 214010
container_issue 21
container_start_page 214010
container_title Journal of physics. Condensed matter
container_volume 32
creator Zhang, Yuteng
Séguy, Isabelle
Ridier, Karl
Shalabaeva, Victoria
Piedrahita-Bello, Mario
Rotaru, Aurelian
Salmon, Lionel
Molnár, Gábor
Bousseksou, Azzedine
description Multilayer crossbar junctions composed of ITO/[Fe(HB(1,2,4-triazol-1-yl) ) ]/M (with M  =  Al or Ca) were fabricated and investigated for their resistance switching properties. Current-voltage-temperature maps revealed ON/OFF resistance ratios as high as 400, with the ON and OFF states defined, respectively, as the low-resistance, low spin state and the high-resistance, high spin state of the spin crossover layer. Similar results were obtained with Al and Ca cathodes indicating that the charge transport in the insulating spin crossover film is at the origin of the resistance switching instead of electron injection at the electrodes. The reproducibility and stability of the device properties were also studied.
doi_str_mv 10.1088/1361-648X/ab741e
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fullrecord <record><control><sourceid>proquest_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_03019003v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2352644025</sourcerecordid><originalsourceid>FETCH-LOGICAL-c375t-be0fa3a4e2ae52c92a772f57c51e2c04f2c931c004d72dff3f54a40006a169cc3</originalsourceid><addsrcrecordid>eNo9kVuLE0EQhRtR3Ozqu09Sj8nDmL7Nzbd1MUYIBkRBEGkqPTWbXuYSp3virr_DH2yPWfNUcPjOKaoOY68EfyN4USyFykSS6eLbEne5FvSEzc7SUzbjZaqSoiz0Bbv0_o5zrguln7MLJbmSZZbO2J_P5J0P2FkC_8sFu3fdLbgOGhxuKcGBEI40BGexgbuxs8H1nYe-hrAnaPuG7BhR8IfosUPvfR9xsH17aOgevq9ovn43D78XoGABEn68he2n5Xa1ggFjlAfsKqjo6Kb9AXeuceHhBXtWY-Pp5eO8Yl9X77_crJPN9sPHm-tNYlWehmRHvEaFmiRSKm0pMc9lneY2FSQt13XUlLDx6iqXVV2rOtWo4xcyFFlprbpii1PuHhtzGFyLw4Pp0Zn19cZMGldclJyro4js_MQehv7nSD6Y1nlLTYMd9aM3UqUy05rLNKL8hP77x0D1OVtwM_VmppLMVJI59RYtrx_Tx11L1dnwvyj1F6sik4Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2352644025</pqid></control><display><type>article</type><title>Resistance switching in large-area vertical junctions of the molecular spin crossover complex [Fe(HB(tz) 3 ) 2 ]: ON/OFF ratios and device stability</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Zhang, Yuteng ; Séguy, Isabelle ; Ridier, Karl ; Shalabaeva, Victoria ; Piedrahita-Bello, Mario ; Rotaru, Aurelian ; Salmon, Lionel ; Molnár, Gábor ; Bousseksou, Azzedine</creator><creatorcontrib>Zhang, Yuteng ; Séguy, Isabelle ; Ridier, Karl ; Shalabaeva, Victoria ; Piedrahita-Bello, Mario ; Rotaru, Aurelian ; Salmon, Lionel ; Molnár, Gábor ; Bousseksou, Azzedine</creatorcontrib><description>Multilayer crossbar junctions composed of ITO/[Fe(HB(1,2,4-triazol-1-yl) ) ]/M (with M  =  Al or Ca) were fabricated and investigated for their resistance switching properties. Current-voltage-temperature maps revealed ON/OFF resistance ratios as high as 400, with the ON and OFF states defined, respectively, as the low-resistance, low spin state and the high-resistance, high spin state of the spin crossover layer. Similar results were obtained with Al and Ca cathodes indicating that the charge transport in the insulating spin crossover film is at the origin of the resistance switching instead of electron injection at the electrodes. The reproducibility and stability of the device properties were also studied.</description><identifier>ISSN: 0953-8984</identifier><identifier>EISSN: 1361-648X</identifier><identifier>DOI: 10.1088/1361-648X/ab741e</identifier><identifier>PMID: 32032965</identifier><language>eng</language><publisher>England: IOP Publishing [1989-....]</publisher><subject>Engineering Sciences ; Micro and nanotechnologies ; Microelectronics</subject><ispartof>Journal of physics. Condensed matter, 2020-05, Vol.32 (21), p.214010-214010</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c375t-be0fa3a4e2ae52c92a772f57c51e2c04f2c931c004d72dff3f54a40006a169cc3</citedby><cites>FETCH-LOGICAL-c375t-be0fa3a4e2ae52c92a772f57c51e2c04f2c931c004d72dff3f54a40006a169cc3</cites><orcidid>0000-0002-8782-7988 ; 0000-0001-6032-6393 ; 0000-0002-8064-8960 ; 0000-0002-7414-1872 ; 0000-0002-1619-532X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/32032965$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-03019003$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhang, Yuteng</creatorcontrib><creatorcontrib>Séguy, Isabelle</creatorcontrib><creatorcontrib>Ridier, Karl</creatorcontrib><creatorcontrib>Shalabaeva, Victoria</creatorcontrib><creatorcontrib>Piedrahita-Bello, Mario</creatorcontrib><creatorcontrib>Rotaru, Aurelian</creatorcontrib><creatorcontrib>Salmon, Lionel</creatorcontrib><creatorcontrib>Molnár, Gábor</creatorcontrib><creatorcontrib>Bousseksou, Azzedine</creatorcontrib><title>Resistance switching in large-area vertical junctions of the molecular spin crossover complex [Fe(HB(tz) 3 ) 2 ]: ON/OFF ratios and device stability</title><title>Journal of physics. Condensed matter</title><addtitle>J Phys Condens Matter</addtitle><description>Multilayer crossbar junctions composed of ITO/[Fe(HB(1,2,4-triazol-1-yl) ) ]/M (with M  =  Al or Ca) were fabricated and investigated for their resistance switching properties. Current-voltage-temperature maps revealed ON/OFF resistance ratios as high as 400, with the ON and OFF states defined, respectively, as the low-resistance, low spin state and the high-resistance, high spin state of the spin crossover layer. Similar results were obtained with Al and Ca cathodes indicating that the charge transport in the insulating spin crossover film is at the origin of the resistance switching instead of electron injection at the electrodes. The reproducibility and stability of the device properties were also studied.</description><subject>Engineering Sciences</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><issn>0953-8984</issn><issn>1361-648X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNo9kVuLE0EQhRtR3Ozqu09Sj8nDmL7Nzbd1MUYIBkRBEGkqPTWbXuYSp3virr_DH2yPWfNUcPjOKaoOY68EfyN4USyFykSS6eLbEne5FvSEzc7SUzbjZaqSoiz0Bbv0_o5zrguln7MLJbmSZZbO2J_P5J0P2FkC_8sFu3fdLbgOGhxuKcGBEI40BGexgbuxs8H1nYe-hrAnaPuG7BhR8IfosUPvfR9xsH17aOgevq9ovn43D78XoGABEn68he2n5Xa1ggFjlAfsKqjo6Kb9AXeuceHhBXtWY-Pp5eO8Yl9X77_crJPN9sPHm-tNYlWehmRHvEaFmiRSKm0pMc9lneY2FSQt13XUlLDx6iqXVV2rOtWo4xcyFFlprbpii1PuHhtzGFyLw4Pp0Zn19cZMGldclJyro4js_MQehv7nSD6Y1nlLTYMd9aM3UqUy05rLNKL8hP77x0D1OVtwM_VmppLMVJI59RYtrx_Tx11L1dnwvyj1F6sik4Q</recordid><startdate>20200513</startdate><enddate>20200513</enddate><creator>Zhang, Yuteng</creator><creator>Séguy, Isabelle</creator><creator>Ridier, Karl</creator><creator>Shalabaeva, Victoria</creator><creator>Piedrahita-Bello, Mario</creator><creator>Rotaru, Aurelian</creator><creator>Salmon, Lionel</creator><creator>Molnár, Gábor</creator><creator>Bousseksou, Azzedine</creator><general>IOP Publishing [1989-....]</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0002-8782-7988</orcidid><orcidid>https://orcid.org/0000-0001-6032-6393</orcidid><orcidid>https://orcid.org/0000-0002-8064-8960</orcidid><orcidid>https://orcid.org/0000-0002-7414-1872</orcidid><orcidid>https://orcid.org/0000-0002-1619-532X</orcidid></search><sort><creationdate>20200513</creationdate><title>Resistance switching in large-area vertical junctions of the molecular spin crossover complex [Fe(HB(tz) 3 ) 2 ]: ON/OFF ratios and device stability</title><author>Zhang, Yuteng ; Séguy, Isabelle ; Ridier, Karl ; Shalabaeva, Victoria ; Piedrahita-Bello, Mario ; Rotaru, Aurelian ; Salmon, Lionel ; Molnár, Gábor ; Bousseksou, Azzedine</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c375t-be0fa3a4e2ae52c92a772f57c51e2c04f2c931c004d72dff3f54a40006a169cc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Engineering Sciences</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Yuteng</creatorcontrib><creatorcontrib>Séguy, Isabelle</creatorcontrib><creatorcontrib>Ridier, Karl</creatorcontrib><creatorcontrib>Shalabaeva, Victoria</creatorcontrib><creatorcontrib>Piedrahita-Bello, Mario</creatorcontrib><creatorcontrib>Rotaru, Aurelian</creatorcontrib><creatorcontrib>Salmon, Lionel</creatorcontrib><creatorcontrib>Molnár, Gábor</creatorcontrib><creatorcontrib>Bousseksou, Azzedine</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Journal of physics. Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Yuteng</au><au>Séguy, Isabelle</au><au>Ridier, Karl</au><au>Shalabaeva, Victoria</au><au>Piedrahita-Bello, Mario</au><au>Rotaru, Aurelian</au><au>Salmon, Lionel</au><au>Molnár, Gábor</au><au>Bousseksou, Azzedine</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Resistance switching in large-area vertical junctions of the molecular spin crossover complex [Fe(HB(tz) 3 ) 2 ]: ON/OFF ratios and device stability</atitle><jtitle>Journal of physics. Condensed matter</jtitle><addtitle>J Phys Condens Matter</addtitle><date>2020-05-13</date><risdate>2020</risdate><volume>32</volume><issue>21</issue><spage>214010</spage><epage>214010</epage><pages>214010-214010</pages><issn>0953-8984</issn><eissn>1361-648X</eissn><abstract>Multilayer crossbar junctions composed of ITO/[Fe(HB(1,2,4-triazol-1-yl) ) ]/M (with M  =  Al or Ca) were fabricated and investigated for their resistance switching properties. Current-voltage-temperature maps revealed ON/OFF resistance ratios as high as 400, with the ON and OFF states defined, respectively, as the low-resistance, low spin state and the high-resistance, high spin state of the spin crossover layer. Similar results were obtained with Al and Ca cathodes indicating that the charge transport in the insulating spin crossover film is at the origin of the resistance switching instead of electron injection at the electrodes. The reproducibility and stability of the device properties were also studied.</abstract><cop>England</cop><pub>IOP Publishing [1989-....]</pub><pmid>32032965</pmid><doi>10.1088/1361-648X/ab741e</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0002-8782-7988</orcidid><orcidid>https://orcid.org/0000-0001-6032-6393</orcidid><orcidid>https://orcid.org/0000-0002-8064-8960</orcidid><orcidid>https://orcid.org/0000-0002-7414-1872</orcidid><orcidid>https://orcid.org/0000-0002-1619-532X</orcidid><oa>free_for_read</oa></addata></record>
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subjects Engineering Sciences
Micro and nanotechnologies
Microelectronics
title Resistance switching in large-area vertical junctions of the molecular spin crossover complex [Fe(HB(tz) 3 ) 2 ]: ON/OFF ratios and device stability
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T04%3A50%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Resistance%20switching%20in%20large-area%20vertical%20junctions%20of%20the%20molecular%20spin%20crossover%20complex%20%5BFe(HB(tz)%203%20)%202%20%5D:%20ON/OFF%20ratios%20and%20device%20stability&rft.jtitle=Journal%20of%20physics.%20Condensed%20matter&rft.au=Zhang,%20Yuteng&rft.date=2020-05-13&rft.volume=32&rft.issue=21&rft.spage=214010&rft.epage=214010&rft.pages=214010-214010&rft.issn=0953-8984&rft.eissn=1361-648X&rft_id=info:doi/10.1088/1361-648X/ab741e&rft_dat=%3Cproquest_hal_p%3E2352644025%3C/proquest_hal_p%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2352644025&rft_id=info:pmid/32032965&rfr_iscdi=true