Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography

The distribution and electrical activity of p-type doping (Mg) in gallium nitride (GaN) grown by metal organic chemical vapor deposition was investigated by correlating atom probe tomography (APT) and off-axis electron holography. APT results revealed that high Mg concentrations promote the formatio...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of applied physics 2020-02, Vol.127 (6), Article 065702
Hauptverfasser:	Amichi, Lynda, Mouton, Isabelle, Di Russo, Enrico, Boureau, Victor, Barbier, Frédéric, Dussaigne, Amélie, Grenier, Adeline, Jouneau, Pierre-Henri, Bougerol, Catherine, Cooper, David
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Materials Science Physical Sciences Physics Physics, Applied Science & Technology
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!