Angular dependence of the tunnel magnetoresistance in transition-metal-based junctions

Angular dependence of the tunnel magnetoresistance in transition-metal-based junctions

We have investigated the angular behavior of the tunnel magnetoresistance ͑TMR͒ in transition-metal-based junctions using the low-field susceptibility of the crossed magnetic configuration. The noncollinear arrangement , stabilized by combining step anisotropy and interfacial exchange-bias coupling,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physical review. B, Condensed matter Condensed matter, 2001-07, Vol.64 (6), Article 064427
Hauptverfasser: Jaffrès, H., Lacour, D., Nguyen Van Dau, F., Briatico, J., Petroff, F., Vaurès, A.
Format: Artikel
Sprache:eng
Schlagworte:
Condensed Matter
Physics
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 6
container_start_page
container_title Physical review. B, Condensed matter
container_volume 64
creator Jaffrès, H.
Lacour, D.
Nguyen Van Dau, F.
Briatico, J.
Petroff, F.
Vaurès, A.
description We have investigated the angular behavior of the tunnel magnetoresistance ͑TMR͒ in transition-metal-based junctions using the low-field susceptibility of the crossed magnetic configuration. The noncollinear arrangement , stabilized by combining step anisotropy and interfacial exchange-bias coupling, is shown to be of a particular interest for an accurate analysis of the angular dependence of the TMR. We show that the intrinsic tunnel processes are reflected on a linear behavior of the conductivity giving a more complex form for the resistance, as expected by the model of Slonczewski. The more intuitive ''high-field'' saturating regime deviates the hard layer from its nominal pinning direction and consequently is shown to be less adapted for the experimental study of the intrinsic angular response of the TMR.
doi_str_mv 10.1103/PhysRevB.64.064427
format Article
fullrecord <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_02954107v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_02954107v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c323t-3baa8064decb0de97cb9cfdab631230d9c17c55dc71a264ab310ca3f3e8c5f33</originalsourceid><addsrcrecordid>eNo9kE9LAzEQxYMoWKtfwFOuHlLzZzfbHGtRKxQUKV7DbDLbbtlmS5IW_PZ2qTqXgTfvDY8fIfeCT4Tg6vFj850-8fg00cWE66KQ1QUZCW5KpipTXpIRF1oxMZXmmtyktOWnkdqMyNcsrA8dROpxj8FjcEj7huYN0nwIATu6g3XA3EdMbcow3NtAc4SQ2tz2ge0wQ8dqSOjp9hDcIKZbctVAl_Dud4_J6uV5NV-w5fvr23y2ZE5JlZmqAaanvh5dzT2aytXGNR5qrYRU3BsnKleW3lUCpC6gVoI7UI3CqSsbpcbk4fx2A53dx3YH8dv20NrFbGkHjUtTFoJXR3HyyrPXxT6liM1_QHA7QLR_EK0u7Bmi-gGbdGkm</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Angular dependence of the tunnel magnetoresistance in transition-metal-based junctions</title><source>American Physical Society Journals</source><creator>Jaffrès, H. ; Lacour, D. ; Nguyen Van Dau, F. ; Briatico, J. ; Petroff, F. ; Vaurès, A.</creator><creatorcontrib>Jaffrès, H. ; Lacour, D. ; Nguyen Van Dau, F. ; Briatico, J. ; Petroff, F. ; Vaurès, A.</creatorcontrib><description>We have investigated the angular behavior of the tunnel magnetoresistance ͑TMR͒ in transition-metal-based junctions using the low-field susceptibility of the crossed magnetic configuration. The noncollinear arrangement , stabilized by combining step anisotropy and interfacial exchange-bias coupling, is shown to be of a particular interest for an accurate analysis of the angular dependence of the TMR. We show that the intrinsic tunnel processes are reflected on a linear behavior of the conductivity giving a more complex form for the resistance, as expected by the model of Slonczewski. The more intuitive ''high-field'' saturating regime deviates the hard layer from its nominal pinning direction and consequently is shown to be less adapted for the experimental study of the intrinsic angular response of the TMR.</description><identifier>ISSN: 0163-1829</identifier><identifier>EISSN: 1095-3795</identifier><identifier>DOI: 10.1103/PhysRevB.64.064427</identifier><language>eng</language><publisher>American Physical Society</publisher><subject>Condensed Matter ; Physics</subject><ispartof>Physical review. B, Condensed matter, 2001-07, Vol.64 (6), Article 064427</ispartof><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c323t-3baa8064decb0de97cb9cfdab631230d9c17c55dc71a264ab310ca3f3e8c5f33</citedby><cites>FETCH-LOGICAL-c323t-3baa8064decb0de97cb9cfdab631230d9c17c55dc71a264ab310ca3f3e8c5f33</cites><orcidid>0000-0002-5871-8870 ; 0000-0002-2730-1255</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,2876,2877,27924,27925</link.rule.ids><backlink>$$Uhttps://hal.science/hal-02954107$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Jaffrès, H.</creatorcontrib><creatorcontrib>Lacour, D.</creatorcontrib><creatorcontrib>Nguyen Van Dau, F.</creatorcontrib><creatorcontrib>Briatico, J.</creatorcontrib><creatorcontrib>Petroff, F.</creatorcontrib><creatorcontrib>Vaurès, A.</creatorcontrib><title>Angular dependence of the tunnel magnetoresistance in transition-metal-based junctions</title><title>Physical review. B, Condensed matter</title><description>We have investigated the angular behavior of the tunnel magnetoresistance ͑TMR͒ in transition-metal-based junctions using the low-field susceptibility of the crossed magnetic configuration. The noncollinear arrangement , stabilized by combining step anisotropy and interfacial exchange-bias coupling, is shown to be of a particular interest for an accurate analysis of the angular dependence of the TMR. We show that the intrinsic tunnel processes are reflected on a linear behavior of the conductivity giving a more complex form for the resistance, as expected by the model of Slonczewski. The more intuitive ''high-field'' saturating regime deviates the hard layer from its nominal pinning direction and consequently is shown to be less adapted for the experimental study of the intrinsic angular response of the TMR.</description><subject>Condensed Matter</subject><subject>Physics</subject><issn>0163-1829</issn><issn>1095-3795</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNo9kE9LAzEQxYMoWKtfwFOuHlLzZzfbHGtRKxQUKV7DbDLbbtlmS5IW_PZ2qTqXgTfvDY8fIfeCT4Tg6vFj850-8fg00cWE66KQ1QUZCW5KpipTXpIRF1oxMZXmmtyktOWnkdqMyNcsrA8dROpxj8FjcEj7huYN0nwIATu6g3XA3EdMbcow3NtAc4SQ2tz2ge0wQ8dqSOjp9hDcIKZbctVAl_Dud4_J6uV5NV-w5fvr23y2ZE5JlZmqAaanvh5dzT2aytXGNR5qrYRU3BsnKleW3lUCpC6gVoI7UI3CqSsbpcbk4fx2A53dx3YH8dv20NrFbGkHjUtTFoJXR3HyyrPXxT6liM1_QHA7QLR_EK0u7Bmi-gGbdGkm</recordid><startdate>200107</startdate><enddate>200107</enddate><creator>Jaffrès, H.</creator><creator>Lacour, D.</creator><creator>Nguyen Van Dau, F.</creator><creator>Briatico, J.</creator><creator>Petroff, F.</creator><creator>Vaurès, A.</creator><general>American Physical Society</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><scope>VOOES</scope><orcidid>https://orcid.org/0000-0002-5871-8870</orcidid><orcidid>https://orcid.org/0000-0002-2730-1255</orcidid></search><sort><creationdate>200107</creationdate><title>Angular dependence of the tunnel magnetoresistance in transition-metal-based junctions</title><author>Jaffrès, H. ; Lacour, D. ; Nguyen Van Dau, F. ; Briatico, J. ; Petroff, F. ; Vaurès, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c323t-3baa8064decb0de97cb9cfdab631230d9c17c55dc71a264ab310ca3f3e8c5f33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Condensed Matter</topic><topic>Physics</topic><toplevel>online_resources</toplevel><creatorcontrib>Jaffrès, H.</creatorcontrib><creatorcontrib>Lacour, D.</creatorcontrib><creatorcontrib>Nguyen Van Dau, F.</creatorcontrib><creatorcontrib>Briatico, J.</creatorcontrib><creatorcontrib>Petroff, F.</creatorcontrib><creatorcontrib>Vaurès, A.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>Hyper Article en Ligne (HAL) (Open Access)</collection><jtitle>Physical review. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jaffrès, H.</au><au>Lacour, D.</au><au>Nguyen Van Dau, F.</au><au>Briatico, J.</au><au>Petroff, F.</au><au>Vaurès, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Angular dependence of the tunnel magnetoresistance in transition-metal-based junctions</atitle><jtitle>Physical review. B, Condensed matter</jtitle><date>2001-07</date><risdate>2001</risdate><volume>64</volume><issue>6</issue><artnum>064427</artnum><issn>0163-1829</issn><eissn>1095-3795</eissn><abstract>We have investigated the angular behavior of the tunnel magnetoresistance ͑TMR͒ in transition-metal-based junctions using the low-field susceptibility of the crossed magnetic configuration. The noncollinear arrangement , stabilized by combining step anisotropy and interfacial exchange-bias coupling, is shown to be of a particular interest for an accurate analysis of the angular dependence of the TMR. We show that the intrinsic tunnel processes are reflected on a linear behavior of the conductivity giving a more complex form for the resistance, as expected by the model of Slonczewski. The more intuitive ''high-field'' saturating regime deviates the hard layer from its nominal pinning direction and consequently is shown to be less adapted for the experimental study of the intrinsic angular response of the TMR.</abstract><pub>American Physical Society</pub><doi>10.1103/PhysRevB.64.064427</doi><orcidid>https://orcid.org/0000-0002-5871-8870</orcidid><orcidid>https://orcid.org/0000-0002-2730-1255</orcidid><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0163-1829
ispartof Physical review. B, Condensed matter, 2001-07, Vol.64 (6), Article 064427
issn 0163-1829
1095-3795
language eng
recordid cdi_hal_primary_oai_HAL_hal_02954107v1
source American Physical Society Journals
subjects Condensed Matter
Physics
title Angular dependence of the tunnel magnetoresistance in transition-metal-based junctions
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T14%3A36%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Angular%20dependence%20of%20the%20tunnel%20magnetoresistance%20in%20transition-metal-based%20junctions&rft.jtitle=Physical%20review.%20B,%20Condensed%20matter&rft.au=Jaffr%C3%A8s,%20H.&rft.date=2001-07&rft.volume=64&rft.issue=6&rft.artnum=064427&rft.issn=0163-1829&rft.eissn=1095-3795&rft_id=info:doi/10.1103/PhysRevB.64.064427&rft_dat=%3Chal_cross%3Eoai_HAL_hal_02954107v1%3C/hal_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true