An electron holography study of perpendicular magnetic tunnel junctions nanostructured by deposition on pre-patterned conducting pillars

The fabrication of multi-gigabit magnetic random access memory (MRAM) chips requires the patterning of magnetic tunnel junctions at very small dimensions (sub-30 nm) and a very dense pitch. This remains a challenge due to the difficulty in etching magnetic tunnel junction stacks. We previously propo...

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Veröffentlicht in:	Nanoscale 2020-09, Vol.12 (33), p.17312-17318
Hauptverfasser:	Boureau, V, Nguyen, V. D, Masseboeuf, A, Palomino, A, Gautier, E, Chatterjee, J, Lequeux, S, Auffret, S, Vila, L, Sousa, R, Prejbeanu, L, Cooper, D, Dieny, B
Format:	Artikel
Sprache:	eng
Schlagworte:	Chips (memory devices) Configurations Crosstalk Deposition Electric contacts Electrical junctions Electrons Holography Magnetic materials Magnetic storage Physics Random access memory Room temperature Trenches Tunnel junctions
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