Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices

In this paper the effects from the high-κdielectric thickness and the metal gate deposition technique on the mobility of n-channel MOS transistors are investigated. The results reveal mobility degradation due to an increase of charge density in the dielectric and / or at the material interfaces, not...

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Veröffentlicht in:	Microelectronic engineering 2005-06, Vol.80, p.86-89
Hauptverfasser:	Trojman, L., Ragnarsson, L.-Å., Pantisano, L., Lujan, G.S., Houssa, M., Schram, T., Cubaynes, F., Schaekers, M., Van Ammel, A., Groeseneken, G., De Gendt, S., Heyns, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Engineering Sciences Exact sciences and technology high-κ metal gate MOS transistor metal deposition Micro and nanotechnologies Microelectronics mobility reduction oxide thickness screening effect Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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