Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices
In this paper the effects from the high-κdielectric thickness and the metal gate deposition technique on the mobility of n-channel MOS transistors are investigated. The results reveal mobility degradation due to an increase of charge density in the dielectric and / or at the material interfaces, not...
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| Veröffentlicht in: | Microelectronic engineering 2005-06, Vol.80, p.86-89 |
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| creator | Trojman, L. Ragnarsson, L.-Å. Pantisano, L. Lujan, G.S. Houssa, M. Schram, T. Cubaynes, F. Schaekers, M. Van Ammel, A. Groeseneken, G. De Gendt, S. Heyns, M. |
| description | In this paper the effects from the high-κdielectric thickness and the metal gate deposition technique on the mobility of n-channel MOS transistors are investigated. The results reveal mobility degradation due to an increase of charge density in the dielectric and / or at the material interfaces, not efficiently compensated by the screening effect from the gate. We correlate this mobility degradation to the reduction observed in a comparison between metal and poly-Si gated MOSFETs. It is shown that the mobility can be improved by using different metals deposition technique, which indicates that the mobility reduction is related to the deposition technique. |
| doi_str_mv | 10.1016/j.mee.2005.04.107 |
| format | Article |
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The results reveal mobility degradation due to an increase of charge density in the dielectric and / or at the material interfaces, not efficiently compensated by the screening effect from the gate. We correlate this mobility degradation to the reduction observed in a comparison between metal and poly-Si gated MOSFETs. It is shown that the mobility can be improved by using different metals deposition technique, which indicates that the mobility reduction is related to the deposition technique.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2005.04.107</identifier><identifier>CODEN: MIENEF</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Electronics ; Engineering Sciences ; Exact sciences and technology ; high-κ metal gate MOS transistor ; metal deposition ; Micro and nanotechnologies ; Microelectronics ; mobility reduction ; oxide thickness ; screening effect ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The results reveal mobility degradation due to an increase of charge density in the dielectric and / or at the material interfaces, not efficiently compensated by the screening effect from the gate. We correlate this mobility degradation to the reduction observed in a comparison between metal and poly-Si gated MOSFETs. It is shown that the mobility can be improved by using different metals deposition technique, which indicates that the mobility reduction is related to the deposition technique.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Engineering Sciences</subject><subject>Exact sciences and technology</subject><subject>high-κ metal gate MOS transistor</subject><subject>metal deposition</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>mobility reduction</subject><subject>oxide thickness</subject><subject>screening effect</subject><subject>Semiconductor electronics. Microelectronics. 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| subjects | Applied sciences Electronics Engineering Sciences Exact sciences and technology high-κ metal gate MOS transistor metal deposition Micro and nanotechnologies Microelectronics mobility reduction oxide thickness screening effect Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices |
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