Interpretation of the Temperature‐Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD

Electron transport in Si‐doped and unintentionally‐doped GaN films grown on sapphire by MOCVD and MBE has been analysed assuming that a parallel conducting channel, via an impurity band, is present. No dependence on growth method or dopant type was observed, but other trends were apparent: a) the ac...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 1999-11
Hauptverfasser:	Harris, J.J., Lee, K, Harrison, I., Flannery, L. B., Korakakis, D., Cheng, T. S., Foxon, C. T., Bougrioua, Z., Moerman, I., Stricht, W. van Der, Thrush, E. J., Hamilton, B., Ferhah, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics
Online-Zugang:	Volltext
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