Formation mechanism and properties of twinned structures in (111) seeded directionally solidified solar grade silicon

The growth structure of photovoltaic multicrystalline silicon formed by directional solidification presents a high fraction of Σ3 and higher order twins. Previous studies proposed that these complex structures are formed by a succession of 2D nucleation events of Σ3 twins on {111} growth facets at t...

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Veröffentlicht in:	Acta materialia 2016-12, Vol.121, p.24-36
Hauptverfasser:	Oliveira, V.A., Marie, B., Cayron, C., Marinova, M., Tsoutsouva, M.G., Sio, H.C., Lafford, T.A., Baruchel, J., Audoit, G., Grenier, A., Tran Thi, T.N., Camel, D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical Sciences Crystal growth Crystal structure Crystals Defects Directional solidification Electrical properties Formations Grains Material chemistry Monolike silicon Nucleation Silicon Twinning Walls
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