Efficient silicon nitride SiN x :H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells

This work demonstrates the efficient optical and passivation properties provided by hydrogenated silicon nitride (SiN x :H) layers deposited in a lab‐scale atmospheric pressure plasma enhanced chemical vapor deposition (AP‐PECVD) reactor. By applying modulated low‐frequency plasma (200 kHz), homogen...

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Veröffentlicht in:	Progress in photovoltaics 2019-11, Vol.27 (11), p.1007-1019
Hauptverfasser:	Lelièvre, Jean‐François, Kafle, Bishal, Saint‐Cast, Pierre, Brunet, Paul, Magnan, Romain, Hernandez, Emmanuel, Pouliquen, Sylvain, Massines, Françoise
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed Matter Physics
Online-Zugang:	Volltext
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