Mapping of individual dislocations with dark‐field X‐ray microscopy

This article presents an X‐ray microscopy approach for mapping deeply embedded dislocations in three dimensions using a monochromatic beam with a low divergence. Magnified images are acquired by inserting an X‐ray objective lens in the diffracted beam. The strain fields close to the core of dislocat...

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Veröffentlicht in:	Journal of applied crystallography 2019-02, Vol.52 (1), p.122-132
Hauptverfasser:	Jakobsen, A. C., Simons, H., Ludwig, W., Yildirim, C., Leemreize, H., Porz, L., Detlefs, C., Poulsen, H. F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Apertures Bismuth compounds Condensed Matter Diamonds diffraction contrast tomography diffraction imaging Dislocation Dislocations Divergence Engineering Sciences Epitaxial growth Focal plane Image acquisition Image contrast Lattice strain Mapping Materials Materials Science Mathematical analysis Microscopy Misfit dislocations Physics Strontium titanates structural characterization Substrates synchrotron radiation tomography topography X‐ray diffraction microscopy
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