Transfer impedance calculations of electronic noise in two-terminal semiconductor structures
The time-domain formulation of the transfer-impedance method is developed to calculate the impedance field of two-terminal semiconductor structures. The voltage noise spectrum associated with velocity fluctuations is then calculated for overmicron and submicron n+nn+ GaAs diodes in the framework of...
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| Veröffentlicht in: | Journal of applied physics 1998-02, Vol.83 (4), p.2052-2066 |
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| Format: | Artikel |
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| container_end_page | 2066 |
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| container_issue | 4 |
| container_start_page | 2052 |
| container_title | Journal of applied physics |
| container_volume | 83 |
| creator | Starikov, E. Shiktorov, P. Gružinskis, V. Varani, L. Vaissiere, J. C. Nougier, J. P. González, T. Mateos, J. Pardo, D. Reggiani, L. |
| description | The time-domain formulation of the transfer-impedance method is developed to calculate the impedance field of two-terminal semiconductor structures. The voltage noise spectrum associated with velocity fluctuations is then calculated for overmicron and submicron n+nn+ GaAs diodes in the framework of a closed hydrodynamic approach based on the velocity and energy conservation equations. Transit-time effects are found to influence substantially the noise spectrum in a wide frequency range above 10 GHz. The good agreement found with Monte Carlo simulations validates the proposed theoretical approach. |
| doi_str_mv | 10.1063/1.366938 |
| format | Article |
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| ispartof | Journal of applied physics, 1998-02, Vol.83 (4), p.2052-2066 |
| issn | 0021-8979 1089-7550 |
| language | eng |
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| source | AIP Digital Archive |
| subjects | Computational Physics Condensed Matter Electronics Engineering Sciences Materials Science Physics |
| title | Transfer impedance calculations of electronic noise in two-terminal semiconductor structures |
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