Transverse magnetoresistance induced by electron-surface scattering on thin gold films: Experiment and theory
We report new experimental data regarding the transverse magnetoresistance measured in a family of thin gold films of different thickness with the electric field E oriented perpendicular to the magnetic field B (both fields contained within the plane of the film), as well as a theoretical descriptio...
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| Veröffentlicht in: | Applied surface science 2014-01, Vol.289, p.167-172 |
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| creator | Oyarzún, Simón Henríquez, Ricardo Suárez, Marco Antonio Moraga, Luis Kremer, Germán Munoz, Raúl C. |
| description | We report new experimental data regarding the transverse magnetoresistance measured in a family of thin gold films of different thickness with the electric field E oriented perpendicular to the magnetic field B (both fields contained within the plane of the film), as well as a theoretical description of size effects based upon a solution of Boltzmann Transport Equation. The measurements were performed at low temperatures T (4K≤T≤50K) under magnetic field strengths B (1.5T≤B≤9T). The magnetoresistance signal can be univocally identified as arising from electron-surface scattering, for the Hall mobility at 4K depends linearly on film thickness. The magnetoresistance signal exhibits a marked thickness dependence, and its curvature as a function of magnetic field B varies with film thickness. The theoretical description of the magnetic field dependence of the magnetoresistance requires a Hall field that varies with the thickness of the film; this Hall field is tuned to reproduce the experimental data. |
| doi_str_mv | 10.1016/j.apsusc.2013.10.128 |
| format | Article |
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The measurements were performed at low temperatures T (4K≤T≤50K) under magnetic field strengths B (1.5T≤B≤9T). The magnetoresistance signal can be univocally identified as arising from electron-surface scattering, for the Hall mobility at 4K depends linearly on film thickness. The magnetoresistance signal exhibits a marked thickness dependence, and its curvature as a function of magnetic field B varies with film thickness. 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The measurements were performed at low temperatures T (4K≤T≤50K) under magnetic field strengths B (1.5T≤B≤9T). The magnetoresistance signal can be univocally identified as arising from electron-surface scattering, for the Hall mobility at 4K depends linearly on film thickness. The magnetoresistance signal exhibits a marked thickness dependence, and its curvature as a function of magnetic field B varies with film thickness. The theoretical description of the magnetic field dependence of the magnetoresistance requires a Hall field that varies with the thickness of the film; this Hall field is tuned to reproduce the experimental data.</description><subject>Boltzmann transport equation</subject><subject>Chemical Sciences</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Effects</subject><subject>Electron-surface scattering</subject><subject>Engineering Sciences</subject><subject>Exact sciences and technology</subject><subject>Film thickness</subject><subject>Gold</subject><subject>Magnetic fields</subject><subject>Magnetomorphic</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Mathematical analysis</subject><subject>Physics</subject><subject>Scattering</subject><subject>Size effects</subject><subject>Thin films</subject><subject>Transverse magnetoresistance</subject><issn>0169-4332</issn><issn>1873-5584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kc1uEzEUhUcVlRpa3oCFN0iwmGB7bMfDAqmqCkWKxKasLWNfp45m7OA7EzVvj8NUXbKydM93f3xO07xndM0oU5_3a3vAGd2aU9atz1WuL5oV05uulVKLN82qYn0ruo5fNW8R95RWZNOtmvGx2IRHKAhktLsEUy6AESebHJCY_OzAk98nAgO4qeTU4lyCrRo6O01QYtqRnMj0FBPZ5cGTEIcRv5D750MVR0gTsclXHXI53TSXwQ4I717e6-bXt_vHu4d2-_P7j7vbbesE7aaWKcWCoFozxgV1XkpKgwTXKw7Bisr0qtdV40wEJriknlPXU0d90Buw3XXzaZn7ZAdzqGfYcjLZRvNwuzXnGuUd7bVUR1bZjwt7KPnPDDiZMaKDYbAJ8oyGKS03indKVVQsqCsZsUB4nc2oOSdh9mZJwpyT-FflurZ9eNlgq2lDqI67iK-9XMv6MSUr93XhoFpzjFAMugg1Bx9LNd_4HP-_6C_2FqCg</recordid><startdate>20140115</startdate><enddate>20140115</enddate><creator>Oyarzún, Simón</creator><creator>Henríquez, Ricardo</creator><creator>Suárez, Marco Antonio</creator><creator>Moraga, Luis</creator><creator>Kremer, Germán</creator><creator>Munoz, Raúl C.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>1XC</scope></search><sort><creationdate>20140115</creationdate><title>Transverse magnetoresistance induced by electron-surface scattering on thin gold films: Experiment and theory</title><author>Oyarzún, Simón ; 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The measurements were performed at low temperatures T (4K≤T≤50K) under magnetic field strengths B (1.5T≤B≤9T). The magnetoresistance signal can be univocally identified as arising from electron-surface scattering, for the Hall mobility at 4K depends linearly on film thickness. The magnetoresistance signal exhibits a marked thickness dependence, and its curvature as a function of magnetic field B varies with film thickness. The theoretical description of the magnetic field dependence of the magnetoresistance requires a Hall field that varies with the thickness of the film; this Hall field is tuned to reproduce the experimental data.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2013.10.128</doi><tpages>6</tpages></addata></record> |
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| subjects | Boltzmann transport equation Chemical Sciences Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Effects Electron-surface scattering Engineering Sciences Exact sciences and technology Film thickness Gold Magnetic fields Magnetomorphic Magnetoresistance Magnetoresistivity Mathematical analysis Physics Scattering Size effects Thin films Transverse magnetoresistance |
| title | Transverse magnetoresistance induced by electron-surface scattering on thin gold films: Experiment and theory |
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