Structural analysis of W3O/WO3 and TiO/TiO2 periodic multilayer thin films sputter deposited by the reactive gas pulsing process

DC reactive sputtering was used to deposit titanium and tungsten-based metal/oxide periodic nanometric multilayers using pure metallic targets and Ar+O2 gas mixture as reactive atmosphere. The innovative technique namely, the reactive gas pulsing process allows switching between the metal and oxide...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Thin solid films 2012-05, Vol.520 (14), p.4778-4781
Hauptverfasser: Cacucci, A., Potin, V., Imhoff, L., Marco de Lucas, M.C., Martin, N.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 4781
container_issue 14
container_start_page 4778
container_title Thin solid films
container_volume 520
creator Cacucci, A.
Potin, V.
Imhoff, L.
Marco de Lucas, M.C.
Martin, N.
description DC reactive sputtering was used to deposit titanium and tungsten-based metal/oxide periodic nanometric multilayers using pure metallic targets and Ar+O2 gas mixture as reactive atmosphere. The innovative technique namely, the reactive gas pulsing process allows switching between the metal and oxide to prepare a periodic multilayered structure with various metalloid concentrations and nanometric dimensions. The same pulsing period was used for each deposition to produce metal-oxide periodic alternations close to 10nm. Structure, crystallinity and chemical composition of these films were systematically investigated by Raman spectroscopy, X-ray diffraction and Energy-dispersiveX-ray spectroscopy techniques. The high resolution transmission electron microscopy allowed observing the sharpness of the metal/oxide interfaces and measuring the thickness of each kind of layers. Moreover, the crystalline structure of metal and metal oxide layers was also studied. The difference of reactivity between the two systems leads to periodic β-W3O/a-WO3 and face-centered-cubic-TiO/a-TiO2 multilayers.
doi_str_mv 10.1016/j.tsf.2011.10.180
format Article
fullrecord <record><control><sourceid>elsevier_hal_p</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_02300353v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0040609011019213</els_id><sourcerecordid>S0040609011019213</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-fe71c66610c3e36a0a997c6b4236c51ac00dc907db89422dfa47b4d5dc83432c3</originalsourceid><addsrcrecordid>eNp9kEGP0zAQhS0EEmXhB3DzhQOHtGM7cRJxWq2ARarUA4v2aLljZ9eVm0Qep1Jv_HRcivbIYTTSN-_NaB5jHwWsBQi9OawzDWsJQqwvqINXbCW6tq9kq8RrtgKoodLQw1v2jugAAEJKtWK_f-a0YF6SjdyONp4pEJ8G_qh2m8edKszxh7DblJJ89ilMLiA_LjGHaM8-8fwcRj6EeCRO85JzQc7PE4XsHd-fy9zz5C3mcPL8yRKfl0hhfOJzmtATvWdvBhvJf_jXb9ivb18f7u6r7e77j7vbbYWyF7kafCtQay0AlVfagu37FvW-lkpjIywCOOyhdfuur6V0g63bfe0ah52qlUR1wz5f9z7baOYUjjadzWSDub_dmgsDqQBUo06iaMVVi2kiSn54MQgwl7jNwZS4zSXuv6iD4vl09cyW0MYh2REDvRhl09eqaXTRfbnqfHn2FHwyhMGP6F1IHrNxU_jPlT84zpWq</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Structural analysis of W3O/WO3 and TiO/TiO2 periodic multilayer thin films sputter deposited by the reactive gas pulsing process</title><source>Elsevier ScienceDirect Journals</source><creator>Cacucci, A. ; Potin, V. ; Imhoff, L. ; Marco de Lucas, M.C. ; Martin, N.</creator><creatorcontrib>Cacucci, A. ; Potin, V. ; Imhoff, L. ; Marco de Lucas, M.C. ; Martin, N.</creatorcontrib><description>DC reactive sputtering was used to deposit titanium and tungsten-based metal/oxide periodic nanometric multilayers using pure metallic targets and Ar+O2 gas mixture as reactive atmosphere. The innovative technique namely, the reactive gas pulsing process allows switching between the metal and oxide to prepare a periodic multilayered structure with various metalloid concentrations and nanometric dimensions. The same pulsing period was used for each deposition to produce metal-oxide periodic alternations close to 10nm. Structure, crystallinity and chemical composition of these films were systematically investigated by Raman spectroscopy, X-ray diffraction and Energy-dispersiveX-ray spectroscopy techniques. The high resolution transmission electron microscopy allowed observing the sharpness of the metal/oxide interfaces and measuring the thickness of each kind of layers. Moreover, the crystalline structure of metal and metal oxide layers was also studied. The difference of reactivity between the two systems leads to periodic β-W3O/a-WO3 and face-centered-cubic-TiO/a-TiO2 multilayers.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2011.10.180</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Acoustics ; Composition and phase identification ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Deposition by sputtering ; Engineering Sciences ; Exact sciences and technology ; Magnetron sputtering ; Materials ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Micro and nanotechnologies ; Microelectronics ; Multilayers ; Physics ; Reactive gas pulsing process ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; Titanium oxide ; Tungsten oxide</subject><ispartof>Thin solid films, 2012-05, Vol.520 (14), p.4778-4781</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-fe71c66610c3e36a0a997c6b4236c51ac00dc907db89422dfa47b4d5dc83432c3</citedby><cites>FETCH-LOGICAL-c291t-fe71c66610c3e36a0a997c6b4236c51ac00dc907db89422dfa47b4d5dc83432c3</cites><orcidid>0000-0003-1115-5342 ; 0000-0001-5135-4026 ; 0000-0003-4462-3544</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0040609011019213$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,309,310,314,776,780,785,786,881,3537,23909,23910,25118,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=25943556$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-02300353$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Cacucci, A.</creatorcontrib><creatorcontrib>Potin, V.</creatorcontrib><creatorcontrib>Imhoff, L.</creatorcontrib><creatorcontrib>Marco de Lucas, M.C.</creatorcontrib><creatorcontrib>Martin, N.</creatorcontrib><title>Structural analysis of W3O/WO3 and TiO/TiO2 periodic multilayer thin films sputter deposited by the reactive gas pulsing process</title><title>Thin solid films</title><description>DC reactive sputtering was used to deposit titanium and tungsten-based metal/oxide periodic nanometric multilayers using pure metallic targets and Ar+O2 gas mixture as reactive atmosphere. The innovative technique namely, the reactive gas pulsing process allows switching between the metal and oxide to prepare a periodic multilayered structure with various metalloid concentrations and nanometric dimensions. The same pulsing period was used for each deposition to produce metal-oxide periodic alternations close to 10nm. Structure, crystallinity and chemical composition of these films were systematically investigated by Raman spectroscopy, X-ray diffraction and Energy-dispersiveX-ray spectroscopy techniques. The high resolution transmission electron microscopy allowed observing the sharpness of the metal/oxide interfaces and measuring the thickness of each kind of layers. Moreover, the crystalline structure of metal and metal oxide layers was also studied. The difference of reactivity between the two systems leads to periodic β-W3O/a-WO3 and face-centered-cubic-TiO/a-TiO2 multilayers.</description><subject>Acoustics</subject><subject>Composition and phase identification</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Deposition by sputtering</subject><subject>Engineering Sciences</subject><subject>Exact sciences and technology</subject><subject>Magnetron sputtering</subject><subject>Materials</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>Multilayers</subject><subject>Physics</subject><subject>Reactive gas pulsing process</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><subject>Titanium oxide</subject><subject>Tungsten oxide</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp9kEGP0zAQhS0EEmXhB3DzhQOHtGM7cRJxWq2ARarUA4v2aLljZ9eVm0Qep1Jv_HRcivbIYTTSN-_NaB5jHwWsBQi9OawzDWsJQqwvqINXbCW6tq9kq8RrtgKoodLQw1v2jugAAEJKtWK_f-a0YF6SjdyONp4pEJ8G_qh2m8edKszxh7DblJJ89ilMLiA_LjGHaM8-8fwcRj6EeCRO85JzQc7PE4XsHd-fy9zz5C3mcPL8yRKfl0hhfOJzmtATvWdvBhvJf_jXb9ivb18f7u6r7e77j7vbbYWyF7kafCtQay0AlVfagu37FvW-lkpjIywCOOyhdfuur6V0g63bfe0ah52qlUR1wz5f9z7baOYUjjadzWSDub_dmgsDqQBUo06iaMVVi2kiSn54MQgwl7jNwZS4zSXuv6iD4vl09cyW0MYh2REDvRhl09eqaXTRfbnqfHn2FHwyhMGP6F1IHrNxU_jPlT84zpWq</recordid><startdate>20120501</startdate><enddate>20120501</enddate><creator>Cacucci, A.</creator><creator>Potin, V.</creator><creator>Imhoff, L.</creator><creator>Marco de Lucas, M.C.</creator><creator>Martin, N.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0003-1115-5342</orcidid><orcidid>https://orcid.org/0000-0001-5135-4026</orcidid><orcidid>https://orcid.org/0000-0003-4462-3544</orcidid></search><sort><creationdate>20120501</creationdate><title>Structural analysis of W3O/WO3 and TiO/TiO2 periodic multilayer thin films sputter deposited by the reactive gas pulsing process</title><author>Cacucci, A. ; Potin, V. ; Imhoff, L. ; Marco de Lucas, M.C. ; Martin, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-fe71c66610c3e36a0a997c6b4236c51ac00dc907db89422dfa47b4d5dc83432c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Acoustics</topic><topic>Composition and phase identification</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Deposition by sputtering</topic><topic>Engineering Sciences</topic><topic>Exact sciences and technology</topic><topic>Magnetron sputtering</topic><topic>Materials</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>Multilayers</topic><topic>Physics</topic><topic>Reactive gas pulsing process</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><topic>Titanium oxide</topic><topic>Tungsten oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cacucci, A.</creatorcontrib><creatorcontrib>Potin, V.</creatorcontrib><creatorcontrib>Imhoff, L.</creatorcontrib><creatorcontrib>Marco de Lucas, M.C.</creatorcontrib><creatorcontrib>Martin, N.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cacucci, A.</au><au>Potin, V.</au><au>Imhoff, L.</au><au>Marco de Lucas, M.C.</au><au>Martin, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural analysis of W3O/WO3 and TiO/TiO2 periodic multilayer thin films sputter deposited by the reactive gas pulsing process</atitle><jtitle>Thin solid films</jtitle><date>2012-05-01</date><risdate>2012</risdate><volume>520</volume><issue>14</issue><spage>4778</spage><epage>4781</epage><pages>4778-4781</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>DC reactive sputtering was used to deposit titanium and tungsten-based metal/oxide periodic nanometric multilayers using pure metallic targets and Ar+O2 gas mixture as reactive atmosphere. The innovative technique namely, the reactive gas pulsing process allows switching between the metal and oxide to prepare a periodic multilayered structure with various metalloid concentrations and nanometric dimensions. The same pulsing period was used for each deposition to produce metal-oxide periodic alternations close to 10nm. Structure, crystallinity and chemical composition of these films were systematically investigated by Raman spectroscopy, X-ray diffraction and Energy-dispersiveX-ray spectroscopy techniques. The high resolution transmission electron microscopy allowed observing the sharpness of the metal/oxide interfaces and measuring the thickness of each kind of layers. Moreover, the crystalline structure of metal and metal oxide layers was also studied. The difference of reactivity between the two systems leads to periodic β-W3O/a-WO3 and face-centered-cubic-TiO/a-TiO2 multilayers.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2011.10.180</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-1115-5342</orcidid><orcidid>https://orcid.org/0000-0001-5135-4026</orcidid><orcidid>https://orcid.org/0000-0003-4462-3544</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0040-6090
ispartof Thin solid films, 2012-05, Vol.520 (14), p.4778-4781
issn 0040-6090
1879-2731
language eng
recordid cdi_hal_primary_oai_HAL_hal_02300353v1
source Elsevier ScienceDirect Journals
subjects Acoustics
Composition and phase identification
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
Engineering Sciences
Exact sciences and technology
Magnetron sputtering
Materials
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Micro and nanotechnologies
Microelectronics
Multilayers
Physics
Reactive gas pulsing process
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Titanium oxide
Tungsten oxide
title Structural analysis of W3O/WO3 and TiO/TiO2 periodic multilayer thin films sputter deposited by the reactive gas pulsing process
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T04%3A23%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-elsevier_hal_p&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Structural%20analysis%20of%20W3O/WO3%20and%20TiO/TiO2%20periodic%20multilayer%20thin%20films%20sputter%20deposited%20by%20the%20reactive%20gas%20pulsing%20process&rft.jtitle=Thin%20solid%20films&rft.au=Cacucci,%20A.&rft.date=2012-05-01&rft.volume=520&rft.issue=14&rft.spage=4778&rft.epage=4781&rft.pages=4778-4781&rft.issn=0040-6090&rft.eissn=1879-2731&rft.coden=THSFAP&rft_id=info:doi/10.1016/j.tsf.2011.10.180&rft_dat=%3Celsevier_hal_p%3ES0040609011019213%3C/elsevier_hal_p%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_els_id=S0040609011019213&rfr_iscdi=true