Enhanced Curie temperature in N-deficient GdN
Polycrystalline GdN thin films have been grown at room temperature with varying N 2 pressure. By varying the nitrogen pressure during growth we alter the carrier concentrations of the films. Films grown at low nitrogen pressures display onset of magnetization at temperatures as high as 200 K and a r...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2011-03, Vol.98 (11), p.112503-112503-3 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 112503-3 |
|---|---|
| container_issue | 11 |
| container_start_page | 112503 |
| container_title | Applied physics letters |
| container_volume | 98 |
| creator | Plank, N. O. V. Natali, F. Galipaud, J. Richter, J. H. Simpson, M. Trodahl, H. J. Ruck, B. J. |
| description | Polycrystalline GdN thin films have been grown at room temperature with varying
N
2
pressure. By varying the nitrogen pressure during growth we alter the carrier concentrations of the films. Films grown at low nitrogen pressures display onset of magnetization at temperatures as high as 200 K and a resistivity of
0.3
m
Ω
cm
, whereas films grown at high nitrogen pressures all show a Curie temperature very close to 70 K and resistivity ranges over
1
-
1000
Ω
cm
are observed. For all GdN films a peak in the resistivity occurs at
T
C
. |
| doi_str_mv | 10.1063/1.3566996 |
| format | Article |
| fullrecord | <record><control><sourceid>hal_cross</sourceid><recordid>TN_cdi_hal_primary_oai_HAL_hal_02149548v1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>oai_HAL_hal_02149548v1</sourcerecordid><originalsourceid>FETCH-LOGICAL-c384t-bc01b640fcedefc9e81c0127031114a14c26f22ea9af826e8a71867d5d4b68fa3</originalsourceid><addsrcrecordid>eNp1kD1PwzAQhi0EEqEw8A-yMrj4bMdxFqQqKi1SVBaYLcc5q0ZtUjkpEv-e9AOYmE736rlXp4eQe2BTYEo8wlRkShWFuiAJsDynAkBfkoQxJqgqMrgmN33_Ma4ZFyIhdN6ubeuwSct9DJgOuN1htMM-YhradEUb9MEFbId00axuyZW3mx7vznNC3p_nb-WSVq-Ll3JWUSe0HGjtGNRKMj_2oncFahgTnrPxGZAWpOPKc462sF5zhdrmoFXeZI2slfZWTMjDqXdtN2YXw9bGL9PZYJazyhwyxkEWmdSf8Me62PV9RP97AMwcnBgwZycj-3RiexcGO4Su_R_-EWOOYsxRjPgGdV9mnA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Enhanced Curie temperature in N-deficient GdN</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Plank, N. O. V. ; Natali, F. ; Galipaud, J. ; Richter, J. H. ; Simpson, M. ; Trodahl, H. J. ; Ruck, B. J.</creator><creatorcontrib>Plank, N. O. V. ; Natali, F. ; Galipaud, J. ; Richter, J. H. ; Simpson, M. ; Trodahl, H. J. ; Ruck, B. J.</creatorcontrib><description>Polycrystalline GdN thin films have been grown at room temperature with varying
N
2
pressure. By varying the nitrogen pressure during growth we alter the carrier concentrations of the films. Films grown at low nitrogen pressures display onset of magnetization at temperatures as high as 200 K and a resistivity of
0.3
m
Ω
cm
, whereas films grown at high nitrogen pressures all show a Curie temperature very close to 70 K and resistivity ranges over
1
-
1000
Ω
cm
are observed. For all GdN films a peak in the resistivity occurs at
T
C
.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3566996</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><subject>Chemical Sciences ; Condensed Matter ; Electromagnetism ; Engineering Sciences ; Material chemistry ; Materials Science ; Physics</subject><ispartof>Applied physics letters, 2011-03, Vol.98 (11), p.112503-112503-3</ispartof><rights>2011 American Institute of Physics</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c384t-bc01b640fcedefc9e81c0127031114a14c26f22ea9af826e8a71867d5d4b68fa3</citedby><cites>FETCH-LOGICAL-c384t-bc01b640fcedefc9e81c0127031114a14c26f22ea9af826e8a71867d5d4b68fa3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3566996$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,1553,4498,27901,27902,76126,76132</link.rule.ids><backlink>$$Uhttps://hal.science/hal-02149548$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Plank, N. O. V.</creatorcontrib><creatorcontrib>Natali, F.</creatorcontrib><creatorcontrib>Galipaud, J.</creatorcontrib><creatorcontrib>Richter, J. H.</creatorcontrib><creatorcontrib>Simpson, M.</creatorcontrib><creatorcontrib>Trodahl, H. J.</creatorcontrib><creatorcontrib>Ruck, B. J.</creatorcontrib><title>Enhanced Curie temperature in N-deficient GdN</title><title>Applied physics letters</title><description>Polycrystalline GdN thin films have been grown at room temperature with varying
N
2
pressure. By varying the nitrogen pressure during growth we alter the carrier concentrations of the films. Films grown at low nitrogen pressures display onset of magnetization at temperatures as high as 200 K and a resistivity of
0.3
m
Ω
cm
, whereas films grown at high nitrogen pressures all show a Curie temperature very close to 70 K and resistivity ranges over
1
-
1000
Ω
cm
are observed. For all GdN films a peak in the resistivity occurs at
T
C
.</description><subject>Chemical Sciences</subject><subject>Condensed Matter</subject><subject>Electromagnetism</subject><subject>Engineering Sciences</subject><subject>Material chemistry</subject><subject>Materials Science</subject><subject>Physics</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp1kD1PwzAQhi0EEqEw8A-yMrj4bMdxFqQqKi1SVBaYLcc5q0ZtUjkpEv-e9AOYmE736rlXp4eQe2BTYEo8wlRkShWFuiAJsDynAkBfkoQxJqgqMrgmN33_Ma4ZFyIhdN6ubeuwSct9DJgOuN1htMM-YhradEUb9MEFbId00axuyZW3mx7vznNC3p_nb-WSVq-Ll3JWUSe0HGjtGNRKMj_2oncFahgTnrPxGZAWpOPKc462sF5zhdrmoFXeZI2slfZWTMjDqXdtN2YXw9bGL9PZYJazyhwyxkEWmdSf8Me62PV9RP97AMwcnBgwZycj-3RiexcGO4Su_R_-EWOOYsxRjPgGdV9mnA</recordid><startdate>20110314</startdate><enddate>20110314</enddate><creator>Plank, N. O. V.</creator><creator>Natali, F.</creator><creator>Galipaud, J.</creator><creator>Richter, J. H.</creator><creator>Simpson, M.</creator><creator>Trodahl, H. J.</creator><creator>Ruck, B. J.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope></search><sort><creationdate>20110314</creationdate><title>Enhanced Curie temperature in N-deficient GdN</title><author>Plank, N. O. V. ; Natali, F. ; Galipaud, J. ; Richter, J. H. ; Simpson, M. ; Trodahl, H. J. ; Ruck, B. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c384t-bc01b640fcedefc9e81c0127031114a14c26f22ea9af826e8a71867d5d4b68fa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Chemical Sciences</topic><topic>Condensed Matter</topic><topic>Electromagnetism</topic><topic>Engineering Sciences</topic><topic>Material chemistry</topic><topic>Materials Science</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Plank, N. O. V.</creatorcontrib><creatorcontrib>Natali, F.</creatorcontrib><creatorcontrib>Galipaud, J.</creatorcontrib><creatorcontrib>Richter, J. H.</creatorcontrib><creatorcontrib>Simpson, M.</creatorcontrib><creatorcontrib>Trodahl, H. J.</creatorcontrib><creatorcontrib>Ruck, B. J.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Plank, N. O. V.</au><au>Natali, F.</au><au>Galipaud, J.</au><au>Richter, J. H.</au><au>Simpson, M.</au><au>Trodahl, H. J.</au><au>Ruck, B. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced Curie temperature in N-deficient GdN</atitle><jtitle>Applied physics letters</jtitle><date>2011-03-14</date><risdate>2011</risdate><volume>98</volume><issue>11</issue><spage>112503</spage><epage>112503-3</epage><pages>112503-112503-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Polycrystalline GdN thin films have been grown at room temperature with varying
N
2
pressure. By varying the nitrogen pressure during growth we alter the carrier concentrations of the films. Films grown at low nitrogen pressures display onset of magnetization at temperatures as high as 200 K and a resistivity of
0.3
m
Ω
cm
, whereas films grown at high nitrogen pressures all show a Curie temperature very close to 70 K and resistivity ranges over
1
-
1000
Ω
cm
are observed. For all GdN films a peak in the resistivity occurs at
T
C
.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3566996</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2011-03, Vol.98 (11), p.112503-112503-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_hal_02149548v1 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Chemical Sciences Condensed Matter Electromagnetism Engineering Sciences Material chemistry Materials Science Physics |
| title | Enhanced Curie temperature in N-deficient GdN |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T17%3A16%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-hal_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Enhanced%20Curie%20temperature%20in%20N-deficient%20GdN&rft.jtitle=Applied%20physics%20letters&rft.au=Plank,%20N.%20O.%20V.&rft.date=2011-03-14&rft.volume=98&rft.issue=11&rft.spage=112503&rft.epage=112503-3&rft.pages=112503-112503-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3566996&rft_dat=%3Chal_cross%3Eoai_HAL_hal_02149548v1%3C/hal_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |