On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure
In this work, we compare the luminescence results obtained on InGaN/GaN multiple quantum well (QW) structures with different numbers of QWs. Structures are designed for scintillating applications, where large QW number covering particle penetration depth is necessary, and fast luminescence response...
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| Veröffentlicht in: | Journal of applied physics 2017-06, Vol.121 (21) |
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| container_title | Journal of applied physics |
| container_volume | 121 |
| creator | Hospodková, A. Oswald, J. Zíková, M. Pangrác, J. Kuldová, K. Blažek, K. Ledoux, G. Dujardin, C. Nikl, M. |
| description | In this work, we compare the luminescence results obtained on InGaN/GaN multiple quantum well (QW) structures with different numbers of QWs. Structures are designed for scintillating applications, where large QW number covering particle penetration depth is necessary, and fast luminescence response is required. Special attention is devoted to increase the intensity of fast excitonic QW emission and to decrease the luminescence of the QW defect band, which has slower luminescence response and is undesired for fast scintillator applications. We found that increasing the In content in QWs suppresses the defect band luminescence and decreasing the QW growth rate increases the photoluminescence (PL) intensity of excitonic luminescence. We also show that increasing the number of InGaN further improves the PL properties of InGaN QWs. The photoluminescence and cathodoluminescence characteristics are compared and discussed. |
| doi_str_mv | 10.1063/1.4984908 |
| format | Article |
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Structures are designed for scintillating applications, where large QW number covering particle penetration depth is necessary, and fast luminescence response is required. Special attention is devoted to increase the intensity of fast excitonic QW emission and to decrease the luminescence of the QW defect band, which has slower luminescence response and is undesired for fast scintillator applications. We found that increasing the In content in QWs suppresses the defect band luminescence and decreasing the QW growth rate increases the photoluminescence (PL) intensity of excitonic luminescence. We also show that increasing the number of InGaN further improves the PL properties of InGaN QWs. The photoluminescence and cathodoluminescence characteristics are compared and discussed.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4984908</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Cathodoluminescence ; Chemical Sciences ; Gallium nitrides ; Luminescence ; Material chemistry ; Penetration depth ; Photoluminescence ; Quantum wells ; Scintillation counters</subject><ispartof>Journal of applied physics, 2017-06, Vol.121 (21)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). 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Structures are designed for scintillating applications, where large QW number covering particle penetration depth is necessary, and fast luminescence response is required. Special attention is devoted to increase the intensity of fast excitonic QW emission and to decrease the luminescence of the QW defect band, which has slower luminescence response and is undesired for fast scintillator applications. We found that increasing the In content in QWs suppresses the defect band luminescence and decreasing the QW growth rate increases the photoluminescence (PL) intensity of excitonic luminescence. We also show that increasing the number of InGaN further improves the PL properties of InGaN QWs. The photoluminescence and cathodoluminescence characteristics are compared and discussed.</description><subject>Applied physics</subject><subject>Cathodoluminescence</subject><subject>Chemical Sciences</subject><subject>Gallium nitrides</subject><subject>Luminescence</subject><subject>Material chemistry</subject><subject>Penetration depth</subject><subject>Photoluminescence</subject><subject>Quantum wells</subject><subject>Scintillation counters</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp90V1LwzAUBuAgCs7phf8g4JVCZ07Tj-RyiF8wFEHxMqRpipEunUm66b833cZ2IUgICScPL-EchM6BTIAU9BomGWcZJ-wAjYAwnpR5Tg7RiJAUEsZLfoxOvP8kBIBRPkKrZ4vDh8aqc063MpjOelzpsNJ686C_lQmdNQq3_dxY7ZW2KpabxigTrz9Y2notX96x7eeVdh4bi-d9G8yi1fjR3sun67gH4IPrVeidPkVHjWy9PtueY_R2d_t685DMnu8fb6azRNECQlJWoHhNK0nqrGRUZTltmE4ZL_KM8VQWFY2LVUUKAFnKKpIVtcyBSNCqogUdo8tN7odsxcKZuXQ_opNGPExnYqjFvkDBaLqEaC82duG6r177ID673tn4PTEgILQksE9UrvPe6WYXC0QMMxAgtjOI9mpjfWziurk7vOzcHopF3fyH_yb_AvDVlA4</recordid><startdate>20170607</startdate><enddate>20170607</enddate><creator>Hospodková, A.</creator><creator>Oswald, J.</creator><creator>Zíková, M.</creator><creator>Pangrác, J.</creator><creator>Kuldová, K.</creator><creator>Blažek, K.</creator><creator>Ledoux, G.</creator><creator>Dujardin, C.</creator><creator>Nikl, M.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0003-1053-0809</orcidid><orcidid>https://orcid.org/0000-0002-0053-1886</orcidid><orcidid>https://orcid.org/0000-0002-0205-9837</orcidid><orcidid>https://orcid.org/0000-0002-0867-1285</orcidid></search><sort><creationdate>20170607</creationdate><title>On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure</title><author>Hospodková, A. ; Oswald, J. ; Zíková, M. ; Pangrác, J. ; Kuldová, K. ; Blažek, K. ; Ledoux, G. ; Dujardin, C. ; Nikl, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c361t-7b1c9d3ba0d4783c453f8e289654892a6b3b3b8b62111428b046da510a1ecb363</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Applied physics</topic><topic>Cathodoluminescence</topic><topic>Chemical Sciences</topic><topic>Gallium nitrides</topic><topic>Luminescence</topic><topic>Material chemistry</topic><topic>Penetration depth</topic><topic>Photoluminescence</topic><topic>Quantum wells</topic><topic>Scintillation counters</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hospodková, A.</creatorcontrib><creatorcontrib>Oswald, J.</creatorcontrib><creatorcontrib>Zíková, M.</creatorcontrib><creatorcontrib>Pangrác, J.</creatorcontrib><creatorcontrib>Kuldová, K.</creatorcontrib><creatorcontrib>Blažek, K.</creatorcontrib><creatorcontrib>Ledoux, G.</creatorcontrib><creatorcontrib>Dujardin, C.</creatorcontrib><creatorcontrib>Nikl, M.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hospodková, A.</au><au>Oswald, J.</au><au>Zíková, M.</au><au>Pangrác, J.</au><au>Kuldová, K.</au><au>Blažek, K.</au><au>Ledoux, G.</au><au>Dujardin, C.</au><au>Nikl, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure</atitle><jtitle>Journal of applied physics</jtitle><date>2017-06-07</date><risdate>2017</risdate><volume>121</volume><issue>21</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>In this work, we compare the luminescence results obtained on InGaN/GaN multiple quantum well (QW) structures with different numbers of QWs. Structures are designed for scintillating applications, where large QW number covering particle penetration depth is necessary, and fast luminescence response is required. Special attention is devoted to increase the intensity of fast excitonic QW emission and to decrease the luminescence of the QW defect band, which has slower luminescence response and is undesired for fast scintillator applications. We found that increasing the In content in QWs suppresses the defect band luminescence and decreasing the QW growth rate increases the photoluminescence (PL) intensity of excitonic luminescence. We also show that increasing the number of InGaN further improves the PL properties of InGaN QWs. 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| issn | 0021-8979 1089-7550 |
| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Cathodoluminescence Chemical Sciences Gallium nitrides Luminescence Material chemistry Penetration depth Photoluminescence Quantum wells Scintillation counters |
| title | On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure |
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