Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

InGaN/GaN multiple quantum well structures are studied as potential candidates for superfast scintillation detectors and show the leading decay time of around 1 ns and intense luminescence. Photoluminescence properties of these structures with quantum well (QW) numbers ranging from 10 to 60 are desc...

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Veröffentlicht in:	CrystEngComm 2019, Vol.21 (2), p.356-362
Hauptverfasser:	Hubáček, Tomáš, Hospodková, Alice, Kuldová, Karla, Oswald, Jiří, Pangrác, Jiří, Jarý, Vitězslav, Dominec, Filip, Slavická Zíková, Markéta, Hájek, František, Hulicius, Eduard, Vetushka, Alexej, Ledoux, Gilles, Dujardin, Christophe, Nikl, Martin
Format:	Artikel
Sprache:	eng
Schlagworte:	Cathodoluminescence Chemical Sciences Coalescing Decay rate Dislocations Excitation Gallium nitrides Indium gallium nitrides Luminescence Material chemistry Photoluminescence Quantum wells Radiative recombination Soft x rays
Online-Zugang:	Volltext
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