Role of stress on the parabolic kinetic constant for dry silicon oxidation

This paper is concerned with the temperature dependence of the parabolic kinetic constant Kp for dry oxidation of silicon. Based on the stress stated model of oxidation, an explanation of the change with temperature of the activation energy of Kp, as well as of the diffusivity decaying near the Si-S...

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Veröffentlicht in:	Journal of applied physics 1984-07, Vol.56 (2), p.589-591
Hauptverfasser:	FARGEIX, A, GHIBAUDO, G
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Engineering Sciences Exact sciences and technology Micro and nanotechnologies Microelectronics Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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