Role of stress on the parabolic kinetic constant for dry silicon oxidation
This paper is concerned with the temperature dependence of the parabolic kinetic constant Kp for dry oxidation of silicon. Based on the stress stated model of oxidation, an explanation of the change with temperature of the activation energy of Kp, as well as of the diffusivity decaying near the Si-S...
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| Veröffentlicht in: | Journal of applied physics 1984-07, Vol.56 (2), p.589-591 |
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| container_end_page | 591 |
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| container_title | Journal of applied physics |
| container_volume | 56 |
| creator | FARGEIX, A GHIBAUDO, G |
| description | This paper is concerned with the temperature dependence of the parabolic kinetic constant Kp for dry oxidation of silicon. Based on the stress stated model of oxidation, an explanation of the change with temperature of the activation energy of Kp, as well as of the diffusivity decaying near the Si-SiO2 interface, is presented by considering the temperature-dependent free energy change due to stress relaxation during growth. The results are favorably compared to dry oxidation data. Moreover, the maximum stress at the Si-SiO2 interface found on the order of 4×1010 dyn/cm2 is consistent with experimental data of stress measurements. |
| doi_str_mv | 10.1063/1.333924 |
| format | Article |
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Based on the stress stated model of oxidation, an explanation of the change with temperature of the activation energy of Kp, as well as of the diffusivity decaying near the Si-SiO2 interface, is presented by considering the temperature-dependent free energy change due to stress relaxation during growth. The results are favorably compared to dry oxidation data. Moreover, the maximum stress at the Si-SiO2 interface found on the order of 4×1010 dyn/cm2 is consistent with experimental data of stress measurements.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.333924</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Engineering Sciences ; Exact sciences and technology ; Micro and nanotechnologies ; Microelectronics ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Journal of applied physics, 1984-07, Vol.56 (2), p.589-591</ispartof><rights>1985 INIST-CNRS</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-486c356b9478459ababcd1ed6397553a3dbe02d99c71ff0ae94a9d9534ad88f83</citedby><cites>FETCH-LOGICAL-c354t-486c356b9478459ababcd1ed6397553a3dbe02d99c71ff0ae94a9d9534ad88f83</cites><orcidid>0000-0001-9901-0679</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8920602$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://hal.science/hal-02114086$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>FARGEIX, A</creatorcontrib><creatorcontrib>GHIBAUDO, G</creatorcontrib><title>Role of stress on the parabolic kinetic constant for dry silicon oxidation</title><title>Journal of applied physics</title><description>This paper is concerned with the temperature dependence of the parabolic kinetic constant Kp for dry oxidation of silicon. Based on the stress stated model of oxidation, an explanation of the change with temperature of the activation energy of Kp, as well as of the diffusivity decaying near the Si-SiO2 interface, is presented by considering the temperature-dependent free energy change due to stress relaxation during growth. The results are favorably compared to dry oxidation data. Moreover, the maximum stress at the Si-SiO2 interface found on the order of 4×1010 dyn/cm2 is consistent with experimental data of stress measurements.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Engineering Sciences</subject><subject>Exact sciences and technology</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1984</creationdate><recordtype>article</recordtype><recordid>eNo9kE9LAzEQxYMoWKvgR8jBgx62JpvsbnIsRa1SEETPYTZ_aHTdlCSI_famrPT0hpnfDG8eQteULChp2T1dMMZkzU_QjBIhq65pyCmaEVLTSshOnqOLlD4JoVQwOUMvb2GwODiccrQp4TDivLV4BxH6MHiNv_xoc1EdxpRhzNiFiE3c4-TLuODh1xvIPoyX6MzBkOzVv87Rx-PD-2pdbV6fnlfLTaVZw3PFRVuKtpe8E7yR0EOvDbWmZbJ4ZcBMb0ltpNQddY6AlRykkQ3jYIRwgs3R3XR3C4PaRf8Nca8CeLVebtShV16lnIj2hxb2dmJ1DClF644LlKhDXoqqKa-C3kzoDpKGwUUYtU9HXsiatKRmfwH5aMw</recordid><startdate>19840715</startdate><enddate>19840715</enddate><creator>FARGEIX, A</creator><creator>GHIBAUDO, G</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0001-9901-0679</orcidid></search><sort><creationdate>19840715</creationdate><title>Role of stress on the parabolic kinetic constant for dry silicon oxidation</title><author>FARGEIX, A ; GHIBAUDO, G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-486c356b9478459ababcd1ed6397553a3dbe02d99c71ff0ae94a9d9534ad88f83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1984</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Engineering Sciences</topic><topic>Exact sciences and technology</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>FARGEIX, A</creatorcontrib><creatorcontrib>GHIBAUDO, G</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>FARGEIX, A</au><au>GHIBAUDO, G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Role of stress on the parabolic kinetic constant for dry silicon oxidation</atitle><jtitle>Journal of applied physics</jtitle><date>1984-07-15</date><risdate>1984</risdate><volume>56</volume><issue>2</issue><spage>589</spage><epage>591</epage><pages>589-591</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>This paper is concerned with the temperature dependence of the parabolic kinetic constant Kp for dry oxidation of silicon. Based on the stress stated model of oxidation, an explanation of the change with temperature of the activation energy of Kp, as well as of the diffusivity decaying near the Si-SiO2 interface, is presented by considering the temperature-dependent free energy change due to stress relaxation during growth. The results are favorably compared to dry oxidation data. Moreover, the maximum stress at the Si-SiO2 interface found on the order of 4×1010 dyn/cm2 is consistent with experimental data of stress measurements.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.333924</doi><tpages>3</tpages><orcidid>https://orcid.org/0000-0001-9901-0679</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 1984-07, Vol.56 (2), p.589-591 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_hal_primary_oai_HAL_hal_02114086v1 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Engineering Sciences Exact sciences and technology Micro and nanotechnologies Microelectronics Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Role of stress on the parabolic kinetic constant for dry silicon oxidation |
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